Robust Computational Models of Quantum Transport in Electronic Devices
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A family of efficient quantum transport models for simulation of modern nanoscale devices is presented. These models are used for quantitative calculations of quantum currents in nanoscale electronic devices within our device simulator software. Specifically, we used them to simulate the tunneling current through thin barrier in vertical-cavity surface-emitting laser (VCSEL), direct and reverse tunnel currents through the tunnel junction, Schottky contact characteristics, and gate induced drain leakage (GIDL).
Keywordssimulations nanoscale devices tunnel junction quantum tunneling
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