Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 231–234 | Cite as

Robust Computational Models of Quantum Transport in Electronic Devices

  • A. I. FedoseyevEmail author
  • A. Przekwas
  • M. Turowski
  • M. S. Wartak


A family of efficient quantum transport models for simulation of modern nanoscale devices is presented. These models are used for quantitative calculations of quantum currents in nanoscale electronic devices within our device simulator software. Specifically, we used them to simulate the tunneling current through thin barrier in vertical-cavity surface-emitting laser (VCSEL), direct and reverse tunnel currents through the tunnel junction, Schottky contact characteristics, and gate induced drain leakage (GIDL).


simulations nanoscale devices tunnel junction quantum tunneling 


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Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  • A. I. Fedoseyev
    • 1
    Email author
  • A. Przekwas
    • 1
  • M. Turowski
    • 1
  • M. S. Wartak
    • 2
  1. 1.CFD Research Corporation (CFDRC)HuntsvilleUSA
  2. 2.Department of Physics and Computer ScienceWilfrid Laurier UniversityWaterlooCanada

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