Advertisement

Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 231–234 | Cite as

Robust Computational Models of Quantum Transport in Electronic Devices

  • A. I. FedoseyevEmail author
  • A. Przekwas
  • M. Turowski
  • M. S. Wartak
Article

Abstract

A family of efficient quantum transport models for simulation of modern nanoscale devices is presented. These models are used for quantitative calculations of quantum currents in nanoscale electronic devices within our device simulator software. Specifically, we used them to simulate the tunneling current through thin barrier in vertical-cavity surface-emitting laser (VCSEL), direct and reverse tunnel currents through the tunnel junction, Schottky contact characteristics, and gate induced drain leakage (GIDL).

Keywords

simulations nanoscale devices tunnel junction quantum tunneling 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    A. Fedoseyev, V. Kolobov, R. Arslanbekov, and A. Przekwas, “Kinetic simulation tools for nanoscale semiconductor devices,” Microelectronic Engineering, 69, 577 (2003).CrossRefGoogle Scholar
  2. 2.
    H. Tsuchiya and T. Miyoshi, “Quantum transport modeling of ultrasmall semiconductor devices,” Special Issue on TCAD for Semiconductor Industries. IEICE Trans. Electron., E82-C (1999), p. 880.Google Scholar
  3. 3.
    J.M. Andrews and M.P. Lepselter, “Reverse current-voltage characteristics of metal-silicide Schottky diodes,” Solid-State Electron., 13, 1011 (1970).CrossRefGoogle Scholar
  4. 4.
    M. Seto, J.-V. Ledue, and A.M.F. Lammers, “Al-n-Si double-schottky photodiodes for optical storage systems,” ESSDERC 97, Stuttgart, 22–24 September 1997.Google Scholar
  5. 5.
    A.I. Fedoseyev, M. Turowski, and M.S. Wartak, “Kinetic and quantum models in simulation of modern nanoscale devices,” in Handbook of Semiconductor Nanostructures and Devices, edited by A.A. Balandin and Kang L. Wang (American Scientific Publishers, Los Angeles, 2005).Google Scholar
  6. 6.
    A. Fedoseyev, A. Przekwas, M. Turowski, and M.S. Wartak, “Quantum-mechanical generalization of drift-diffusion model—implementation and validation,” submitted to IEEE Transactions on Electron Devices, 2004.Google Scholar

Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  • A. I. Fedoseyev
    • 1
    Email author
  • A. Przekwas
    • 1
  • M. Turowski
    • 1
  • M. S. Wartak
    • 2
  1. 1.CFD Research Corporation (CFDRC)HuntsvilleUSA
  2. 2.Department of Physics and Computer ScienceWilfrid Laurier UniversityWaterlooCanada

Personalised recommendations