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Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 165–169 | Cite as

A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability

  • Haldun KufluogluEmail author
  • Muhammad Ashraful Alam
Article

Abstract

Theories of interface trap generation in Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) mechanisms are unified under the geometric interpretation and computational modeling of Reaction-Diffusion (R-D) theoryframework. Analytical derivations that predict the degradation are shown, simulation methodology is explained and numerical solutions are obtained. Time-exponents and degradation behavior under dynamic bias in agreement with experimental observations are discussed. Implications regarding ultra-scaled surround-gate device structures are presented.

Keywords

MOSFET reliability NBTI HCI reaction diffusion surround-gate 

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Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  1. 1.School of Electrical and ComputerPurdue UniversityWest LafayetteUSA

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