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Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 149–155 | Cite as

Evolution of Current Transport Models for Engineering Applications

  • Andreas GehringEmail author
  • Siegfried Selberherr
Article

Abstract

An overview of models for the simulation of current transport in micro- and nanoelectronic devices within the framework of TCAD applications is presented. Starting from macroscopic transport models, currently discussed enhancements are specifically addressed. This comprises the inclusion of higher-order moments into the transport models, the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are able to account for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer’s perspective and an outlook on future research directions is given.

Keywords

device simulation TCAD transport models 

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Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  1. 1.Institute for MicroelectronicsViennaAustria

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