Journal of Applied Electrochemistry

, Volume 38, Issue 5, pp 679–687 | Cite as

Influence of surface roughness on the semiconducting properties of oxide films formed on 304 stainless steel

Original Paper
First Online:
Received:
Revised:
Accepted:

Abstract

Oxide films were formed at 350 °C in borate buffer solution on AISI 304 stainless steel priory abraded with wet SiC paper of different grit size. The films were characterised by Atomic Force Microscopy (AFM) and studied by capacitance, impedance, and photocurrent measurements. The images obtained by AFM microscopy show the evolution of the surface roughness of the films with increasing grit size. Capacitance measurements show that, in all cases, the electronic structure of the films is comparable to that of a p–n heterojunction. This structure is due to the development of space charge layers in the outer iron oxide region at the film/electrolyte interface and in the inner chromium oxide region at the film/metal interface. However, donor and acceptor densities are closely related to the surface roughness via the grit size of the wet SiC paper. An increase in capacitance leading to higher doping densities is manifested by an increase in grit size. These parameters are also frequency dependent. An investigation of the frequency dispersion in relation to the evolution of the surface roughness was performed by analysing the Bode plots through the impedance measurements. The photocurrent results, obtained for the oxide films formed on the different abraded AISI 304, show an increasing photoresponse with decreasing grit size. In spite of this, a constant value of the band gap energy was obtained whatever the oxide film considered. The photocurrent response near the absorption edge is also discussed. The photocurrent response at fixed wavelength and as a function of the applied potential is also influenced by the grit size.

Keywords

Oxide films Grit size Surface roughness AFM microscopy Capacitance Impedance Photocurrent 
This is a preview of subscription content, log in to check access.

References

  1. 1.
    MacDonald DD, Sikora E, Sikora J (1996) Electrochim Acta 41:783CrossRefGoogle Scholar
  2. 2.
    Hakiki NE, Montemor MF, Ferreira MGS, Da Cunha Belo M (2000) Corros Sci 42:687CrossRefGoogle Scholar
  3. 3.
    Montemor MF, Ferreira MGS, Hakiki NE, Da Cunha Belo M (2000) Corros Sci 42:1635CrossRefGoogle Scholar
  4. 4.
    Da Cunha Belo M, Walls M, Hakiki NE, Corset J, Picquenard E, Sagon G, Nöel D (1998) Corros Sci 40:447CrossRefGoogle Scholar
  5. 5.
    Da Cunha Belo M, Rondot B, Compere C, Montemor MF, Simöes AMP, Ferreira MGS (1998) Corros Sci 40:481CrossRefGoogle Scholar
  6. 6.
    Hakiki NE, Boudin S, Rondot B, Da Cunha Belo M (1995) Corros Sci 37:1809CrossRefGoogle Scholar
  7. 7.
    Di Paola A, Di Quarto F, Sunseri C (1986) Corros Sci 26:935CrossRefGoogle Scholar
  8. 8.
    Ferreira MGS, Hakiki NE, Goodlet G, Faty S, Simöes AMP, Da Cunha Belo M (2001) Electrochim Acta 46:3767CrossRefGoogle Scholar
  9. 9.
    Da Cunha Belo M, Hakiki NE, Ferreira MGS (1999) Electrochim Acta 44:2473CrossRefGoogle Scholar
  10. 10.
    Simöes AMP, Ferreira MGS, Lorang G, Da Cunha Belo M (1991) Electrochim Acta 36:315CrossRefGoogle Scholar
  11. 11.
    Di Paola A (1989) Electrochim Acta 34:203CrossRefGoogle Scholar
  12. 12.
    Hakiki NE, Da Cunha Belo M, Simöes AMP, Ferreira MGS (1999) J Electrochem Soc 146:807CrossRefGoogle Scholar
  13. 13.
    Hakiki NE, Da Cunha Belo M, Simöes AMP, Ferreira MGS (1998) J Electrochem Soc 145:3821CrossRefGoogle Scholar
  14. 14.
    Schmuki P, Virtanen S, Isaacs HS, Ryan MP, Davenport AJ, Böhni H, Stenberg T (1998) J Electrochem Soc 145:791CrossRefGoogle Scholar
  15. 15.
    Hakiki NE, Da Cunha Belo M (1996) J Electrochem Soc 143:3088CrossRefGoogle Scholar
  16. 16.
    Schmuki P, Bohni H (1992) J Eleclrochem Soc 139:1908CrossRefGoogle Scholar
  17. 17.
    Simöes AMP, Ferreira MGS, Rondot B, Da Cunha Belo M (1990) J Electrochem Soc 137:82CrossRefGoogle Scholar
  18. 18.
    Sunseri C, Piazza S, Di Quarto F (1990) J Electrochem Soc 137:2411CrossRefGoogle Scholar
  19. 19.
    Schmuki P, Bohni H (1989) J Electrochem Soc 139:7Google Scholar
  20. 20.
    Sunseri C, Piazza S, Di Paola A, Di Quarto F (1987) J Electrochem Soc 134:2410CrossRefGoogle Scholar
  21. 21.
    Hakiki NE, Da Cunha Belo M (1995) CR Acad Sci Paris 320(II):613Google Scholar
  22. 22.
    Hakiki NE, Da Cunha Belo M (1993) CR Acad Sci Paris 317(II):457Google Scholar
  23. 23.
    Delnick FM, Hackermann N (1979) J Electrochem Soc 126:732CrossRefGoogle Scholar
  24. 24.
    Azumi K, Ohtsuka T, Sato N (1987) J Electrochem Soc 134:1352CrossRefGoogle Scholar
  25. 25.
    Stimming U, Schultze JW (1976) Ber Bunsenges Phys Chem 8:129Google Scholar
  26. 26.
    Stimming U (1987) Langmuir 3:423CrossRefGoogle Scholar
  27. 27.
    Dean MH, Stimming U (1987) J Electroanal Chem 228:135CrossRefGoogle Scholar
  28. 28.
    Gillot B, Rousset A (1986) J Solid State Chem 65:322CrossRefGoogle Scholar
  29. 29.
    Tapping RL, Davidson RD, McAlpine E, Lister DH (1986) Corros Sci 26:563CrossRefGoogle Scholar
  30. 30.
    Lister DH, Davidson RD, McAlpine E (1986) Corros Sci 27:113CrossRefGoogle Scholar
  31. 31.
    Robertson J (1991) Corros Sci 32:443CrossRefGoogle Scholar
  32. 32.
    Kim YJ (1995) Corrosion 51:849Google Scholar
  33. 33.
    Schuster E, Neeb KH, Ahlanger W, Henkelmann R, Jarnstrom RTJ (1988) J Nucl Mater 152:1CrossRefGoogle Scholar
  34. 34.
    Farrow RL, Benner RE (1983) Proc Electrochem Soc 83:190Google Scholar
  35. 35.
    Tjong SC (1983) Mater Res Bull 18:157CrossRefGoogle Scholar
  36. 36.
    Fabis P, Heidersbach R, Brown C, Rockeh T (1981) Corrosion 37:700Google Scholar
  37. 37.
    Johnston C (1990) Vib Spectrosc 1:87CrossRefGoogle Scholar
  38. 38.
    Oblonsky LJ, Devine TM (1995) Corros Sci 37:17CrossRefGoogle Scholar
  39. 39.
    Derek J, Gardiner C, Littleton J, Bowden M (1988) Appl Spectrosc 42:15CrossRefGoogle Scholar
  40. 40.
    Szklarska-Smialowska Z, Chou C, Kuo-Chin D, Xia Z, Zaizhu A (1991) Corros Sci 32:609CrossRefGoogle Scholar
  41. 41.
    Xia Z, Lai WK, Szklarska-Smialowska Z (1991) Corrosion 47:173Google Scholar
  42. 42.
    Lorang G, Da Cunha Belo M, Simões AMP, Ferreira MGS (1994) J Electrochem Soc 141:3347CrossRefGoogle Scholar
  43. 43.
    Simoes AMP, Ferreira MGS, Lorang G, Da Cunha Belo M (1991) Electrochim Acta 36:315CrossRefGoogle Scholar
  44. 44.
    Lovrecek B, Sefaja J (1972) Electrochim Acta 17:1151CrossRefGoogle Scholar
  45. 45.
    Mahla E, Nielsen N (1948) J Electrochem Soc 93:1CrossRefGoogle Scholar
  46. 46.
    Sukhotin AM, Grilikhes MS, Lisovaya EV (1989) Electrochim Acta 34:109CrossRefGoogle Scholar
  47. 47.
    Young L (1955) Trans Farad Soc 51:1250CrossRefGoogle Scholar
  48. 48.
    Sato N, Kudo K Noda T (1971) Electrochim Acta 16:1909CrossRefGoogle Scholar
  49. 49.
    Sholt JA, Van Geel Ch (1953) Philips Rev Rep 8:47Google Scholar
  50. 50.
    Dutoit EC, Van Meirhaeghe RL, Cardon F, Gomes WP (1975) Ber Bensenges Phys Chem 79:1206Google Scholar
  51. 51.
    Van Meirhaeghe RL, Dutoit EC, Cardon F, Gomes WP (1975) Electrochim Acta 20: 995CrossRefGoogle Scholar
  52. 52.
    Macdonald JR (1987) Impedance spectroscopy. Wiley, NYGoogle Scholar
  53. 53.
    Gärtner WW (1959) Phys Rev 116:84CrossRefGoogle Scholar
  54. 54.
    Butler MA (1977) J Appl Phys 48:1914CrossRefGoogle Scholar
  55. 55.
    Pankove JI (1975) Optical processes in semiconductors. Dover, NYGoogle Scholar
  56. 56.
    Bube RH (1967) Photoconductivity of solids. Wiley, NYGoogle Scholar
  57. 57.
    Hakiki NE, Simöes AMP, Ferreira MGS, Da Cunha Belo M (2000) Port Electrochim Acta 18:113CrossRefGoogle Scholar
  58. 58.
    Montemor MF, Ferreira MGS, Hakiki NE, Da Cunha Belo M (1998) Mater Sci Forum 289:1139CrossRefGoogle Scholar
  59. 59.
    Hakiki NE, Da Cunha Belo M (1995) CR Acad Sci Paris 320(II):463Google Scholar
  60. 60.
    Kennedy JH, Frese KW (1987) J Electrochem Soc 125:723CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  1. 1.Laboratoire de Physique des Couches Minces et Matériaux pour l’Electronique, Faculté des SciencesUniversité d’OranOranAlgéria

Personalised recommendations