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Correction to: Au2+-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method

  • M. MalińskiEmail author
  • Ł. Chrobak
  • W. Madej
  • N. Kukharchyk
Correction
  • 64 Downloads

1 Correction to: Int J Thermophys (2017) 38:110  https://doi.org/10.1007/s10765-017-2246-2

The original version of the article unfortunately contained errors in Abstract and Fig. 6.

In Abstract, the first sentence ‘Silicon samples were implanted with Au2+ ions of energy 100 keV and doses of 1014 cm−2’ should read ‘Silicon samples were implanted with Au2+ ions of energy 200 keV and doses of 1014 cm−2’.

In page 6, the sentence ‘Using the SRIM computer program, the thickness of the implanted layer was found to be d = 800 Å (Fig. 6)’ should read ‘Using the SRIM computer program, the thickness of the implanted layer was found to be d = 1440 Å (Fig. 6)’. Revised version of Fig. 6 is given below.
Fig. 6

Spatial distribution of Au2+ ions in silicon computed in the SRIM program

Notes

Copyright information

© The Author(s) 2019

Authors and Affiliations

  • M. Maliński
    • 1
    Email author
  • Ł. Chrobak
    • 1
  • W. Madej
    • 1
  • N. Kukharchyk
    • 2
  1. 1.Faculty of Electronics and Computer ScienceKoszalin University of TechnologyKoszalinPoland
  2. 2.Universität des SaarlandesSaarbrückenGermany

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