Correction to: Au2+-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method
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1 Correction to: Int J Thermophys (2017) 38:110 https://doi.org/10.1007/s10765-017-2246-2
The original version of the article unfortunately contained errors in Abstract and Fig. 6.
In Abstract, the first sentence ‘Silicon samples were implanted with Au2+ ions of energy 100 keV and doses of 1014 cm−2’ should read ‘Silicon samples were implanted with Au2+ ions of energy 200 keV and doses of 1014 cm−2’.