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Pyroelectric Property of Binary Nitrides (AlN, GaN and InN)

  • G. Hansdah
  • Bijoy K. SahooEmail author
Article
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Abstract

The pyroelectric (PY) property of binary nitrides (AlN, GaN and InN) has been explored theoretically. The spontaneous and piezoelectric (PZ) polarization modifies the thermal conductivity of these nitrides. The thermal conductivities as a function of temperature including and excluding the polarization mechanism (kp and k) predict a transition temperature (Tp) between primary and secondary PY effects. Below Tp, thermal conductivity kp is lower than k. This is due to negative thermal expansion in binary nitrides. Above Tp, kp is greater than k. kp is significantly contributed by PZ polarization due to thermal expansion which is the reason of secondary PY effect. The transition temperature Tp for AlN, GaN and InN has been predicted as 100 K, 70 K and 60 K, respectively. This study suggests that thermal conductivity study can reveal PY property in semiconductors.

Keywords

III–V Binary nitride Built-in polarization Pyroelectric coefficient Thermal expansion Thermal property 

List of Symbols

BIP

Built-in polarization

\( k_{p} \)

Thermal conductivity including polarization

\( k \)

Thermal conductivity excluding polarization

\( T_{p} \)

Transition temperature

\( \gamma \)

Pyroelectric coefficient

\( \gamma^{p} \)

Primary pyroelectric coefficient

\( \gamma^{s} \)

Secondary pyroelectric coefficient

\( \theta_{D} \)

Debye temperature

\( \theta_{E} \)

Einstein temperature

\( \alpha_{i} \)

Thermal expansion coefficients

\( C_{V} \)

Specific heat capacity at constant volume

\( v \)

Phonon group velocity

\( \tau_{c} \)

Relaxation time

\( P \)

Total polarization

\( P^{sp} \)

Spontaneous polarization

\( P^{pz} \)

Piezoelectric polarization

\( \,E \)

BIP field

\( V_{0} \)

Unit cell volume

\( C_{44} \)

Elastic constant

\( C_{44,\,p} \)

Elastic constant including polarization

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Notes

Acknowledgement

Author BKS acknowledges Science and Engineering Research Board, Government of India, for financial support (Grant No. EMR/2016/001019).

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Authors and Affiliations

  1. 1.Department of PhysicsN. I. TRaipurIndia

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