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Quantitative Analysis of the Degradation Behavior of Silicon Solar Cell Irradiated by 1 MeV Electron Beams Using Photocarrier Radiometry Combined with Lock-in Carrierography

  • Peng Song
  • Junyan Liu
  • Hongtu Xu
  • Yang Wang
ICPPP 19
  • 46 Downloads
Part of the following topical collections:
  1. ICPPP-19: Selected Papers of the 19th International Conference on Photoacoustic and Photothermal Phenomena

Abstract

Silicon solar cells with cover glass irradiated by 1 MeV electron beams at various fluences were investigated using photocarrier radiometry (PCR) combined with lock-in carrierography (LIC, spectrally gated dynamic photoluminescence). The minority carrier transport properties (i.e., minority carrier lifetime τ, diffusion coefficient D, surface recombination velocities S) and the degradation of these properties were studied using PCR. The relative damage coefficient obtained by LIC was consistent with the PCR measurement. The local series resistance of the solar cell before and after irradiation was characterized by LIC. The results showed that the series resistance increased with electron fluences.

Keywords

Electron irradiation Local series resistance Silicon solar cell Transport parameter 

Notes

Acknowledgments

This work was supported by the Foundation for Innovative Research Groups of the National Nature Science Foundation of China under Grant No. 51521003, the Natural Science Foundation of China under Contract No. 61571153, Self-planned Task of State Key Laboratory of Robotics and System (HIT) and the Program of Introducing Talents of Discipline of Universities (Grant No. B07108).

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.School of Mechatronics EngineeringHarbin Institute of TechnologyHarbinPeople’s Republic of China
  2. 2.State Key Laboratory of Robotics and SystemHarbin Institute of TechnologyHarbinPeople’s Republic of China

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