Quantitative Analysis of the Degradation Behavior of Silicon Solar Cell Irradiated by 1 MeV Electron Beams Using Photocarrier Radiometry Combined with Lock-in Carrierography
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Silicon solar cells with cover glass irradiated by 1 MeV electron beams at various fluences were investigated using photocarrier radiometry (PCR) combined with lock-in carrierography (LIC, spectrally gated dynamic photoluminescence). The minority carrier transport properties (i.e., minority carrier lifetime τ, diffusion coefficient D, surface recombination velocities S) and the degradation of these properties were studied using PCR. The relative damage coefficient obtained by LIC was consistent with the PCR measurement. The local series resistance of the solar cell before and after irradiation was characterized by LIC. The results showed that the series resistance increased with electron fluences.
KeywordsElectron irradiation Local series resistance Silicon solar cell Transport parameter
This work was supported by the Foundation for Innovative Research Groups of the National Nature Science Foundation of China under Grant No. 51521003, the Natural Science Foundation of China under Contract No. 61571153, Self-planned Task of State Key Laboratory of Robotics and System (HIT) and the Program of Introducing Talents of Discipline of Universities (Grant No. B07108).