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Thermal Conductivity and Thermal Boundary Resistances of ALD Al\(_{2}\)O\(_{3}\) Films on Si and Sapphire

  • Seung-Min LeeEmail author
  • Wonchul Choi
  • Junsoo Kim
  • Taekwang Kim
  • Jaewoo Lee
  • Sol Yee Im
  • Jung Yoon Kwon
  • Sunae Seo
  • Mincheol Shin
  • Seung Eon Moon
Article
  • 231 Downloads
Part of the following topical collections:
  1. Special Issue: Advances in Thermophysical Properties

Abstract

On Si and sapphire substrates, 6–45 nm thick films of atomic layer-deposited Al\(_{2}\)O\(_{3}\) were grown. The thermal conductivity of ALD films has been determined from a linear relation between film thickness and thermal resistance measured by the 3\(\omega \) method. ALD films on Si and sapphire showed almost same thermal conductivity in the temperature range of 50–350 K. Residual thermal resistance was also obtained by extrapolation of the linear fit and was modeled as a sum of the thermal boundary resistances at heater–film and film–substrate interfaces. The total thermal resistance addenda for films on sapphire was close to independently measured thermal boundary resistance of heater–sapphire interface. From the result, it was deduced that the thermal boundary resistance at ALD Al\(_{2}\)O\(_{3}\)–sapphire interface was much lower than that of heater–film. By contrast, the films on Si showed significantly larger thermal boundary resistance than films on sapphire. Data of \(< 30\) nm films on Si were excluded because an AC coupling of electrical heating voltage to semiconductive Si complicated the relation between 3\(\omega \) voltage and temperature.

Keywords

3\( \omega \) method Al\(_{2}\)O\(_{3}\) Atomic layer deposition Thermal boundary resistance Thermal conductivity 

Notes

Acknowledgements

We would like to acknowledge the financial support from the R&D Convergence Program of NST (National Research Council of Science & Technology) of the Republic of Korea. This material was also supported by the Materials and Components Technology Development Program. of MOTIE/KEIT, Republic of Korea [No.10063286, “Development of high efficient thermoelectric module with figure of merit (Z) 3.4(\(\times \) \(10^{-3}\)) by using 1.0 kg/batch scale producible polycrystalline thermoelectric material with average figure of merit (ZT) 1.4 and over”].

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Copyright information

© Springer Science+Business Media, LLC 2017

Authors and Affiliations

  1. 1.ICT Materials Research GroupETRIDaejeonKorea
  2. 2.Department of PhysicsSejong UniversitySeoulKorea
  3. 3.School of Electrical EngineeringKAISTDaejeonKorea

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