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Lattice Dynamical, Elastic and Thermodynamical Properties of III–V Semiconductor AlSb, GaSb and Their Mixed Semiconductor \(\hbox {Ga}_{\mathrm{1-x}}\hbox {Al}_{\mathrm{x}}\hbox {Sb}\)

  • A. K. KushwahaEmail author
Article
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Abstract

A proposed eleven-parameter three-body shell model is used to study the lattice dynamical properties such as phonon dispersion relations along high symmetry directions, phonon density of states, variation of specific heat and Debye characteristic temperature with absolute temperature, elastic constants and related properties for III–V semiconductor AlSb, GaSb and their mixed semiconductor \(\hbox {Ga}_{\mathrm{1-x}}\hbox {Al}_{\mathrm{x}}\hbox {Sb}\) having zinc-blende structure. We found an overall good agreement with the available experimental and theoretical results available in the literature.

Keywords

Elastic constants Lattice dynamics Mixed semiconductor Phonons 

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Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  1. 1.Department of PhysicsK.N. Govt. P.G. CollegeBhadohiIndia

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