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A Differential Temperature-Dependent Dielectric Relaxation Study of Organoclay Cloisite\(^{\mathrm{TM}}\)

  • Abhimanyu Sharma
  • Rohtash Kumar
  • K. Asokan
  • Kamla RawatEmail author
  • D. Kanjilal
Article
  • 113 Downloads

Abstract

We report variation in the dielectric relaxation profiles of an important class of commercially available Cloisite \(^{\mathrm{TM}}\) organoclays, 25A, 15A, 30B and 10A, which are extensively used as rheology modifiers. A systematic and comprehensive comparison is made of their dielectric permittivity (\({{\upvarepsilon }^{\prime }})\), and loss (\({{\upvarepsilon }^{\prime \prime }})\), conductivity (\({\upsigma }^{\prime })\) and loss tangent (\(\tan \delta )\) parameters as function of temperature. The dispersion profiles showed relatively higher values for \({{\upvarepsilon }^{\prime }}\), \({\upvarepsilon }^{{\prime \prime }}\), \({\upsigma }^{\prime }\) and \(\tan \delta \) for the Cloisite\(^{\mathrm{TM}}\)30B samples in low-frequency region. A clear temperature-dependent transition in the values of \({{\upvarepsilon }^{\prime }}\) and \({{\upvarepsilon }^{\prime \prime }}\) was noticed for Cloisite\(^{\mathrm{TM}}\)25A sample at 436 K, which was independent of frequency, \(\omega \). The values of \({{\upvarepsilon }^{\prime }}\) and \({{\upvarepsilon }^{\prime \prime }}\) showed \(1/\omega \) dependence with temperature. Cloisite\(^{\mathrm{TM}}\)30B sample showed a marked decrease in the value of \(\tan \delta \) with increase in temperature compared to other samples. Thus, it was concluded that these clays bear signature dielectric properties regardless of the fact that they all belong to the same structural class of clays. Considering the large-scale use of these clays in many industrial products the above-mentioned results are of significant importance.

Keywords

Cloisite\(^{\mathrm{TM}}\) Dielectric relaxation Loss tangent Raman spectra Structural change X-ray diffraction 

Notes

Acknowledgements

The authors acknowledge University Grants Commission and Department of Science and Technology, Government of India, for a research fellowship. Authors acknowledge Dr. P. Kumar of Inter University Accelerator Centre, New Delhi, and are thankful to Mr. I. Singh of Special Centre for Nanosciences and Advanced Research Instrumentation Facility of Jawaharlal Nehru University, New Delhi. This work was supported by the Department of Science and Technology (DST), India. KR is very thankful to Department of Science and Technology, Government of India—Inspire Faculty Award.

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  1. 1.Special Center for NanosciencesJawaharlal Nehru UniversityNew DelhiIndia
  2. 2.Inter University Accelerator CentreNew DelhiIndia
  3. 3.School of Physical SciencesJawaharlal Nehru UniversityNew DelhiIndia

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