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International Journal of Thermophysics

, Volume 36, Issue 5–6, pp 1029–1036 | Cite as

Influence of Carrier Transport on Diffraction Efficiency of Steady-State Photocarrier Grating

  • Q. M. Sun
  • Y. F. Wang
  • C. M. GaoEmail author
  • H. Cui
Article
  • 99 Downloads

Abstract

A two-dimensional theoretical model of a diffractive steady-state photocarrier grating (SSPCG) has been developed. The carrier diffusion equation with a spatially periodic excitation source was solved, and an analytical expression of the carrier density distribution was obtained. Based on the band-filling theory and the Kramers–Kronig relation, the carrier-induced refractive index change of SSPCG was estimated, and the refractive index profile was determined. The diffraction efficiency of the SSPCG was calculated by multilevel rigorous coupled-wave analysis. Simulations were carried out to investigate the influence of the carrier transport properties on the diffraction efficiency of the SSPCG. The results show that a semiconductor material with a longer lifetime and a smaller diffusivity will have a higher diffraction efficiency. The spatial amplitude of the carrier density and the grating strength of the SSPCG are closely related to the grating period. For an InP-based SSPCG, the diffraction efficiency of the \(+1\mathrm{st}\) transmitted wave reaches its maximum value (25 %) when the grating provides a \(\pi \) phase shift. The theoretical analysis and conclusions are helpful for material selection and experimental parameter determination of a diffractive SSPCG.

Keywords

Carrier transport Diffraction efficiency Rigorous coupled-wave analysis Steady-state photocarrier grating 

Notes

Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 61379013) and the Central-University Basic Research Fund of UESTC (Grant No. ZYGX2012Z006). QMS gratefully acknowledges the Academic Support Program for Outstanding PhD of UESTC.

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.School of Optoelectronic InformationUniversity of Electronic Science and Technology of ChinaChengduChina

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