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International Journal of Thermophysics

, Volume 35, Issue 2, pp 352–360 | Cite as

Viscosity of Molten InSb, GaSb, and \(\mathrm{{In}}_{x}\mathrm{{Ga}}_{1-{x}}\mathrm{{Sb}}\) Alloy Semiconductors

  • K. Sakata
  • M. Mukai
  • G. Rajesh
  • M. Arivanandhan
  • Y. InatomiEmail author
  • T. Ishikawa
  • Y. Hayakawa
Article
  • 135 Downloads

Abstract

The viscosities of molten InSb, GaSb, and \(\mathrm{{In}}_{{x}}\mathrm{{Ga}}_{1-{x}}\mathrm{{Sb}}\) (\(x=0.2\) and 0.4) were measured as a function of temperature using an oscillating viscometer for fundamental understanding of the physical properties for fabricating high quality InGaSb multicomponent semiconductor crystals. The measured values showed good Arrhenius linearity for InSb, GaSb, and \(\mathrm{{In}}_{{x}}\mathrm{{Ga}}_{1-{x}}\mathrm{{Sb}}\) samples. The absolute values of the viscosity for InSb and GaSb agreed with a previous study. Also, it is suggested that the absolute values of the viscosity among the compounds are quite similar, and the results can be associated with their crystal structures.

Keywords

Gallium antimonide Indium antimonide Indium gallium antimonide Oscillating viscometer Viscosity 

Notes

Acknowledgments

The authors are grateful to Mr. Y. Momose and Mr. T. Koyama in Shizuoka University for their assistance during the experiments. The authors are also grateful to Mr. K. Murakami in the Japan Aerospace Exploration Agency for support of the experiments.

References

  1. 1.
    S. Nakamura, T. Hibiya, Int. J. Thermophys. 13, 1061 (1992)ADSCrossRefGoogle Scholar
  2. 2.
    Y. Sato, Y. Kameda, T. Nagasawa, T. Sakamoto, S. Moriguchi, T. Yamamura, Y. Waseda, J. Cryst. Growth 249, 404 (2003)ADSCrossRefGoogle Scholar
  3. 3.
    V.M. Glazov, S.N. Chizhevskaya, N.N. Glagoleva, Liquid Semiconductors (Plenum, New York, 1969), pp. 117–131CrossRefGoogle Scholar
  4. 4.
    K. Kakimoto, T. Hibiya, J. Appl. Phys. 66, 4181 (1989)ADSCrossRefGoogle Scholar
  5. 5.
    Y. Sato, T. Nishizuka, T. Takamizawa, T. Yamamura, Y. Waseda, Int. J. Thermophys. 23, 235 (2002)CrossRefGoogle Scholar
  6. 6.
    A. Yakymovych, V. Sklyarchuk, Yu. Plevachuk, S. Mudry, Rev. Adv. Mater. Sci. 23, 213 (2010)Google Scholar
  7. 7.
    H. Sasaki, E. Tokizaki, X.M. Huang, K. Terashima, S. Kimura, Jpn. J. Appl. Phys. 34, 3432 (1995)ADSCrossRefGoogle Scholar
  8. 8.
    Y. Sato, T. Nishizuka, T. Tachikawa, M. Hoshi, T. Yamamura, Y. Waseda, High Temp. High Press. 32, 253 (2000)CrossRefGoogle Scholar
  9. 9.
    R. Roscoe, Proc. Phys. Soc. (London) 72, 576 (1958)ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • K. Sakata
    • 1
  • M. Mukai
    • 2
  • G. Rajesh
    • 3
  • M. Arivanandhan
    • 3
  • Y. Inatomi
    • 1
    Email author
  • T. Ishikawa
    • 1
  • Y. Hayakawa
    • 3
  1. 1.Institute of Space and Astronautical ScienceJapan Aerospace Exploration AgencySagamiharaJapan
  2. 2.Advanced Engineering Services Co. LtdTsukubaJapan
  3. 3.Research Institute of ElectronicsShizuoka UniversityHamamatsuJapan

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