International Journal of Thermophysics

, Volume 35, Issue 2, pp 352–360 | Cite as

Viscosity of Molten InSb, GaSb, and \(\mathrm{{In}}_{x}\mathrm{{Ga}}_{1-{x}}\mathrm{{Sb}}\) Alloy Semiconductors

  • K. Sakata
  • M. Mukai
  • G. Rajesh
  • M. Arivanandhan
  • Y. InatomiEmail author
  • T. Ishikawa
  • Y. Hayakawa


The viscosities of molten InSb, GaSb, and \(\mathrm{{In}}_{{x}}\mathrm{{Ga}}_{1-{x}}\mathrm{{Sb}}\) (\(x=0.2\) and 0.4) were measured as a function of temperature using an oscillating viscometer for fundamental understanding of the physical properties for fabricating high quality InGaSb multicomponent semiconductor crystals. The measured values showed good Arrhenius linearity for InSb, GaSb, and \(\mathrm{{In}}_{{x}}\mathrm{{Ga}}_{1-{x}}\mathrm{{Sb}}\) samples. The absolute values of the viscosity for InSb and GaSb agreed with a previous study. Also, it is suggested that the absolute values of the viscosity among the compounds are quite similar, and the results can be associated with their crystal structures.


Gallium antimonide Indium antimonide Indium gallium antimonide Oscillating viscometer Viscosity 



The authors are grateful to Mr. Y. Momose and Mr. T. Koyama in Shizuoka University for their assistance during the experiments. The authors are also grateful to Mr. K. Murakami in the Japan Aerospace Exploration Agency for support of the experiments.


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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • K. Sakata
    • 1
  • M. Mukai
    • 2
  • G. Rajesh
    • 3
  • M. Arivanandhan
    • 3
  • Y. Inatomi
    • 1
    Email author
  • T. Ishikawa
    • 1
  • Y. Hayakawa
    • 3
  1. 1.Institute of Space and Astronautical ScienceJapan Aerospace Exploration AgencySagamiharaJapan
  2. 2.Advanced Engineering Services Co. LtdTsukubaJapan
  3. 3.Research Institute of ElectronicsShizuoka UniversityHamamatsuJapan

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