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1550-nm Driven ErAs:In(Al)GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth

  • U. NandiEmail author
  • J. C. Norman
  • A. C. Gossard
  • H. Lu
  • S. Preu
Article

Abstract

ErAs:In(Al)GaAs superlattice photoconductors are grown using molecular beam epitaxy (MBE) with excellent material characteristics for terahertz time-domain spectroscopy (TDS) systems operating at 1550 nm. The transmitter material (Tx) features a record resistivity of 3.85 kΩcm and record breakdown field strength of 170 ± 40 kV/cm (dark) and 130 ± 20 kV/cm (illuminated with 45 mW laser power). Receivers (Rx) with different superlattice structures were fabricated showing very high mobility (775 cm2/Vs). The TDS system using these photoconductors features a bandwidth larger than 6.5 THz with a laser power of 45 mW at Tx and 16 mW at Rx.

Keywords

Terahertz pulse Photoconductor Time domain spectroscopy (TDS) Rare earth 

Notes

Acknowledgements

We acknowledge the Deutsche Forschungsgemeinschaft (DFG) for funding project PR1413/3-1 (REPHCON). We further thank Christoph Gleichweit (Menlo Systems) for the assistance with the optical system and John Bowers for the partial support of the project.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Electrical Engineering and Information TechnologyTU DarmstadtDarmstadtGermany
  2. 2.Materials DepartmentUniversity of CaliforniaSanta BarbaraUSA
  3. 3.College of Engineering and Applied SciencesNanjing UniversityNanjingChina

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