Quantum Interference Current in InSb Injected by Intense Terahertz Radiation
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Understanding the response of materials to an applied charge current remains one of the central problems in solid-state physics. Push for high-bandwidth injection and readout of electric currents in semiconductors has seeded the revolution in THz science and technology [1, 2]. Optical injection of current enhances the bandwidth but generally relies on either an intrinsic non-centrosymmetry in the material or an applied external bias, in other words an even-order nonlinearity . In contrast, optical generation and control of the directionality of charge current in semiconductors exhibiting complete inversion symmetry is only possible by a symmetry break in the incident field itself, e.g., when the maximal field amplitude in one polarity is different from that in the opposite direction. One way to achieve this is via a phase-stable single-cycle pulse with controlled carrier-envelope phase [4, 5]. Here, the necessity for a short duration of the pulse envelope also sets the...
KeywordsInSb Second Harmonic Gold Contact Indium Antimonide Relative Phase Modulation
We acknowledge the FELBE team for excellent and timely support during the measurement shifts. Denis Seletskiy acknowledges support by the Zukunftskolleg of the University of Konstanz, Landestiftung Baden-Württemberg and BW MWK RiSC Programm. Johannes Bühler acknowledges support by the Carl Zeiss Stiftung.