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A 65 nm CMOS LNA for Bolometer Application

  • Tom Nan HuangEmail author
  • Chirn Chye Boon
  • Forest Xi Zhu
  • Xiang Yi
  • Xiaofeng He
  • Guangyin Feng
  • Wei Meng Lim
  • Bei Liu
Article

Abstract

Modern bolometers generally consist of large-scale arrays of detectors. Implemented in conventional technologies, such bolometer arrays suffer from integrability and productivity issues. Recently, the development of CMOS technologies has presented an opportunity for the massive production of high-performance and highly integrated bolometers. This paper presents a 65-nm CMOS LNA designed for a millimeter-wave bolometer’s pre-amplification stage. By properly applying some positive feedback, the noise figure of the proposed LNA is minimized at under 6 dB and the bandwidth is extended to 30 GHz.

Keywords

Low-noise amplifier CMOS Bolometer Passive imaging 

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Tom Nan Huang
    • 1
    Email author
  • Chirn Chye Boon
    • 1
  • Forest Xi Zhu
    • 2
  • Xiang Yi
    • 1
  • Xiaofeng He
    • 1
  • Guangyin Feng
    • 1
  • Wei Meng Lim
    • 3
  • Bei Liu
    • 1
  1. 1.Virtus, the IC Design Center of ExcellenceNanyang Technological UniversitySingaporeSingapore
  2. 2.Macquarie UniversitySydneyAustralia
  3. 3.CascadeMicrotech, Singapore, Pte., Ltd.SingaporeSingapore

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