Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency

  • Jutta Kühn
  • Friedbert van Raay
  • Rüdiger Quay
  • Rudolf Kiefer
  • Michael Mikulla
  • Matthias Seelmann-Eggebert
  • Wolfgang Bronner
  • Michael Schlechtweg
  • Oliver Ambacher
  • Manfred Thumm
Article

Abstract

The design, realization and characterization of dual-stage X-band high-power and highly-efficient monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) is presented. These high power amplifiers (HPAs) are based on a precise investigation of circuit-relevant HEMT behavior using two different field-plate variants and its effects on PA performance as well as optimization of HPA driver stage size which also has a deep impact on the entire HPA. Two broadband (3 GHz) MMICs with different field-plate variants and two narrowband (1 GHz) PAs with different driver- to final-stage gate-width ratio are realized with a maximum output power of 19-23 W, a maximum power-added efficiency (PAE) of ≥40%, and an associated power gain of 17 dB at X-band. Furthermore, two 1 mm test transistors of the same technology with the mentioned field-plate variants and a 1 mm test MMIC support VSWR-ratio tests of 6:1 and 4:1, respectively.

Keyword

Amplifiers HEMTs Gallium compounds Power amplifiers Microstrip MMICs 

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Jutta Kühn
    • 1
  • Friedbert van Raay
    • 1
  • Rüdiger Quay
    • 1
  • Rudolf Kiefer
    • 1
  • Michael Mikulla
    • 1
  • Matthias Seelmann-Eggebert
    • 1
  • Wolfgang Bronner
    • 1
  • Michael Schlechtweg
    • 1
  • Oliver Ambacher
    • 1
  • Manfred Thumm
    • 2
  1. 1.Fraunhofer Institute for Applied Solid-State Physics (IAF)FreiburgGermany
  2. 2.Institut Für Hochfrequenztechnik und Elektronik (IHE)Universität Karlsruhe (TH)KarlsruheGermany

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