Advertisement

Glass Physics and Chemistry

, Volume 31, Issue 3, pp 370–376 | Cite as

Synthesis of One-Dimensional Nanostructured Silicon Carbide by Chemical Vapor Deposition

  • R. Pampuch
  • G. Gorny
  • L. Stobierski
Proceedings of the Topical Meeting of the European Ceramic Society “Nanoparticles, Nanostructures, and Nanocomposites” (St. Petersburg, Russia, July 5–7, 2004)

Abstract

Nanorods of the wide-bandgap semiconductor silicon carbide belong to a promising group of one-dimensional materials with potential applications extending from reinforcement of composites to applications as building blocks that can be logically assembled into appropriate two- (and three-) dimensional architectures, permitting researchers to exploit their unusual electronic, optical, and other properties. Specific to the most common silicon carbide polytypes are a low intrinsic carrier concentration, an exceptionally high breakdown electric field, high thermal conductivity, high-temperature stability, and resistance to an aggressive environment. This should permit one to develop even submicron-level SiC-based devices operating under high-temperature, high-power, and/or high-radiation conditions, under which conventional semiconductors cannot function. Detailed control of the conditions favorable for the nucleation and growth processes of nanorods of a given SiC polytype is necessary because the electrical and optical properties of each SiC polytype are very different. Therefore, a systematic investigation of factors that primarily influence the morphology and polytype of a vapor-phase-grown SiC has been made in the present work. These factors were the temperature, the flow rates of the gaseous precursors, and the Si/C molar ratio in the gas phase. In order to investigate the role of these factors, the “cold gas-hot substrate” chemical vapor deposition (CVD) method has been applied, because it permits them to be closely controlled in a wide range. While in the overwhelming majority of previous investigations nanorods of the 3C SiC polytype have been grown, the present work delineates conditions that are favorable for the growth of single-phase 2H, 3C, 15R, and 6H SiC nanorods, respectively.

Keywords

Silicon Carbide Nanostructured Silicon Intrinsic Carrier Concentration Conventional Semiconductor Breakdown Electric Field 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

REFERENCES

  1. 1.
    Pensl, G., Morkoc, H., Monemar, B., and Janzen, E., Silicon Carbide, III-Nitrides, and Related Materials, Uetikon-Zurich: Trans. Tech. (Switzerland), 1998, vols. 264–268, pp. 2678–2682.Google Scholar
  2. 2.
    Choyke, L., Matsunami, H., and Pensl, G., Silicon Carbide—A Review of Fundamental Questions and Applications to Current Device Technology, Berlin: Wiley-VCH, 1997.Google Scholar
  3. 3.
    Harris, G.L., Properties of SiC, London: Institute of Electrical Engineers, 1995.Google Scholar
  4. 4.
    Pan, Z., Lai, H.L., Au, F.C.K., Duan, X., Zhou, W., Shi, W., Wang, N., Lee, C-S., and Xie, S., Oriented Silicon Carbide Nanowires: Synthesis and Field Emission Properties, Adv. Mater. (Weinheim, Fed. Repub. Ger.), 2000, vol. 12, pp. 1186–1190.Google Scholar
  5. 5.
    Yang, T.H., Chen, C.H., Chatterjee, A., Li, H.Y., Lo, T., Wu, C.T., Che, K.H., and Chen, L.C., Controlled Growth of Silicon Carbide Nanorods by Rapid Thermal Process and Their Field Emission Properties, Chem. Phys. Lett., 2003, vol. 379, pp. 155–161.Google Scholar
  6. 6.
    Zhang, Y., Nishitani-Gamo, M., Xiao, C., and Ando, T., Synthesis of 3C-SiC Nanowhiskers and Emission of Visible Photoluminescence, J. Appl. Phys., 2002, vol. 91, pp. 6066–6070.Google Scholar
  7. 7.
    Wong, W., Sheehan, P.E., and Lieber, C.M., Nanobeam Mechanics: Elasticity, Strength, and Toughness of Nanorods and Nanotubes, Science (Washington, D. C., 1883-), 1997, vol. 277, pp. 1971–1975.Google Scholar
  8. 8.
    Xia, Y., Yang, P.Y., Sun, Wu. Y., Mayers, B., Gates, B., Yin, Y., Kim, F., and Yan, H., One-Dimensional Nanostructures: Synthesis, Characterization, and Applications, Adv. Mater. (Weinheim, Fed. Repub. Ger.), 2003, vol. 15, pp. 353–389.Google Scholar
  9. 9.
    Pampuch, R. and Stobierski, L., Morphology of Silicon Carbide Formed by Chemical Vapour Deposition, Ceram. Int., 1977, vol. 3, pp. 43–52.Google Scholar
  10. 10.
    Gorny, G. and Pampuch, R., Growth of SiC Whiskers and Platelets from the Gas Phase, in Proceedings of the 1st European Ceramic Society Conference, Amsterdam: Elsevier Applied Science, 1989, vol. 1, pp. 122–126.Google Scholar
  11. 11.
    Wei, Q., Ward, J.W., Vajtai, R., Ajayan, P.M., Ma, R., and Ramanath, G., Simultaneous Growth of Silicon Carbide Nanorods and Carbon Nanotubes, Chem. Phys. Lett., 2002, vol. 354, pp. 264–266.Google Scholar
  12. 12.
    Deng, S.Z., Wu, Z.S., Zhou, J., Xu, N.S., Chen Jian, and Chen Jun, Synthesis of Silicon Carbide Nanowires in a Catalyst-Assisted Process, Chem. Phys. Lett., 2002, vol. 356, pp. 511–514.Google Scholar
  13. 13.
    Lu, Q., Hu, J., Tang, K., Qian, Y., Zhou, G., Liu, X., and Zhu, J., Growth of SiC Nanorods at Low Temperature, Appl. Phys. Lett., 1999, vol. 75, pp. 507–509.Google Scholar
  14. 14.
    Kholmanov, L.N., Kharlamov, A., Baborini, E., Lenardi, C., Li Bassi A., Bottani, C.E., Ducati, D., Maffi, S., Kirillova, N.V., and Milani, P., A Simple Method for the Synthesis of Silicon Carbide Nanorods, J. Nanosci. Nanotechnol., 2002, vol. 2, pp. 1–4.Google Scholar
  15. 15.
    Lai, H.L., Wong, N.B., Zhou, X.T., Peng, H.Y., Au, F.C.K., Wang, N., Lee, C.S., Lee, S.T., and Duan, X.F., Straight β-SiC Nanorods Synthesized by Using C-Si-SiO2, Appl. Phys. Lett., 2000, vol. 76, pp. 194–296.Google Scholar
  16. 16.
    Knippenberg, W.F., Growth Phenomena in Silicon Carbide, Phil. Res. Rept., 1963, vol. 18, pp. 161–274.Google Scholar
  17. 17.
    Hirsch, P.B., Howie, A., Nicholson, R., Pashley, D.V., and Wheelan, M., Electron Microscopy of Thin Crystals, London: Butterworths, 1961.Google Scholar
  18. 18.
    Yao, Y., Lee, S.T., and Li, G.F.H., Direct Synthesis of 2H-SiC Nanowhiskers, Chem. Phys. Lett., 2003, vol. 381, pp. 628–633.Google Scholar
  19. 19.
    Protsessy rosta i sinteza poluprovodnikovykh kristallov i plenok (Growth and Synthesis of Semiconductor Crystals and Layers), Novosibirsk: Nauka (Sib. Otd.), 1975, vol. 1, pp. 11–40.Google Scholar
  20. 20.
    Proceedings of III International Conference on Silicon Carbide, Miami, 1973.Google Scholar

Copyright information

© MAIK “Nauka/Interperiodica” 2005

Authors and Affiliations

  • R. Pampuch
    • 1
  • G. Gorny
    • 1
  • L. Stobierski
    • 1
  1. 1.University of Science and Technology, AGHKrakowPoland

Personalised recommendations