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Cytotechnology

, Volume 66, Issue 2, pp 229–238 | Cite as

Effects of long-term serial cell passaging on cell spreading, migration, and cell-surface ultrastructures of cultured vascular endothelial cells

  • Huanhuan Liao
  • Hui He
  • Yuan Chen
  • Fangfa Zeng
  • Jie Huang
  • Li Wu
  • Yong ChenEmail author
Original Research

Abstract

The effects of serial cell passaging on cell spreading, migration, and cell-surface ultrastructures have been less investigated directly. This study evaluated the effects of long-term serial cell passaging (totally 35 passages) on cultured human umbilical vein endothelial cells which were pre-stored at −80 °C as usual. Percentage- and spread area-based spreading assays, measurements of fluorescently labeled actin filaments, migration assay, and measurements of cell-surface roughness were performed and quantitatively analyzed by confocal microscopy or atomic force microscopy. We found that the abilities of cell spreading and migration first increased at early passages and then decreased after passage 15, in agreement with the changes in average length of actin filaments. Recovery from cold storage and effects of cell passaging were potentially responsible for the increases and decreases of the values, respectively. In contrast, the average roughness of cell surfaces (particularly the nucleus-surrounding region) first dropped at early passages and then rose after passage 15, which might be caused by cold storage- and cell passaging-induced endothelial microparticles. Our data will provide important information for understanding serial cell passaging and implies that for pre-stored adherent cells at −80 °C cell passages 5–10 are optimal for in vitro studies.

Keywords

Cell passaging Cell spreading Cell migration Cell-surface roughness Actin filaments Atomic force microscopy (AFM) Human umbilical vein endothelial cells (HUVECs) 

Notes

Acknowledgments

This work was supported by the National Natural Science Foundation of China (30900340 and 31260205), the Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-sen Unversity; KF2010-MS-07), and the Natural Science Foundation of Jiangxi Province (2010GZN0138).

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Huanhuan Liao
    • 1
    • 2
  • Hui He
    • 1
  • Yuan Chen
    • 1
  • Fangfa Zeng
    • 1
    • 2
  • Jie Huang
    • 1
    • 2
  • Li Wu
    • 1
    • 2
  • Yong Chen
    • 1
    • 2
    • 3
    Email author
  1. 1.Nanoscale Science and Technology Laboratory, Institute for Advanced StudyNanchang UniversityNanchangChina
  2. 2.Department of BiotechnologyNanchang UniversityNanchangChina
  3. 3.State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen UnversityGuangzhouChina

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