Cluster Computing

, Volume 22, Supplement 4, pp 7815–7820 | Cite as

A pressure sensor with electrostatic self-detecting structure

  • Meng NieEmail author
  • Hengshan Yang
  • Yunhan Xia


A piezoresistive pressure sensor with the electrostatic self-detecting structure was developed in the paper, which can solve the issue of low efficiency and time-consuming drawbacks of the traditional method in testing and calibrating the sensor with the specialized equipment. The theoretical model of the composite membrane piezoresistive sensor was established, the analytical model of the electrostatic force driven by an electrostatic voltage was obtained, a feasible fabrication process based on flip-chip process was proposed based on the MEMS processing, the pressure sensor and its detection structure were manufactured to verify the validity of the model in the paper. From the experiment results, it can be verified that the sensitivity of the pressure sensor was 1.77 mV/hPa and the non-linearity was 1.19% respectively. At the same time, the electrostatic force used to test sensor calibration could replace the loaded pressure in the range between 110 and 500 hPa.


Pressure sensor Piezoresistive Self-detecting Electrostatic force Flip-chip 



The authors acknowledge the National Natural Science Foundation of China (Grant No. 61474023) and the National Key Technology Support Program of China (Grant No. 2015BAF16B01).


  1. 1.
    Cao, G., Wang, X.P., Xu, Y., et al.: A micromachined piezoresistive pressure sensor with a shield layer. Sensors 16(8), 1286–1299 (2016)CrossRefGoogle Scholar
  2. 2.
    Wang, Z.R., Wang, S., Zeng, J.F., et al.: High sensitivity, wearable, piezoresistive pressure sensors based on irregular micro hump structures and its applications in body motion sensing. Small 12(28), 3827–3836 (2016)CrossRefGoogle Scholar
  3. 3.
    Aryafar, M., Hamedi, M., Ganjeh, M.M.: A novel temperature compensated piezoresistive pressure sensor. Measurement 63, 25–29 (2015)CrossRefGoogle Scholar
  4. 4.
    Okojie, R.S., Lukco, D., Nguyen, V., et al.: 4H–SiC piezoresistive pressure sensors at \(800\,^{\circ }\text{ C }\) with observed sensitivity recovery. IEEE Electron. Device Lett. 36(2), 174–176 (2015)CrossRefGoogle Scholar
  5. 5.
    Kumar, S.S., Ojha, A.K., Paut, B.D.: Experimental evaluation of sensitivity and non-linearity in polysilicon piezoresistive pressure sensors with different diaphragm sizes. Microsyst. Technol. 22, 83–91 (2016)CrossRefGoogle Scholar
  6. 6.
    Nie, M., Gao, Y.: The analytical calibration model of temperature effects on a silicon piezoresistive pressure sensor. AIP Adv. 7, 035120-1–035120-7 (2017)Google Scholar
  7. 7.
    Niu, Z., Zhao, Y.L., Tian, B.: Design optimization of high pressure and high temperature piezoresistive pressure sensor for high sensitivity. Rev. Sci. Instrum. 85, 015001-1–015001-8 (2014)CrossRefGoogle Scholar
  8. 8.
    Je, C.H., Lee, S.Q., Yang, W.S.: High sensitivity surface micromachined absolute pressure sensor. Proc. Eng. 168, 725–728 (2016)CrossRefGoogle Scholar
  9. 9.
    Wang, J., Jiu, J.T., Araki, T., et al.: Silver nanowire electrodes: conductivity improvement without post-treatment and application in capacitive pressure sensors. Nano-Micro Lett. 7(1), 51–58 (2015)CrossRefGoogle Scholar
  10. 10.
    Vandeparre, H., Watson, D., Lacour, S.P.: Extremely robust and conformable capacitive pressure sensors based on flexible polyurethane foams and stretchable metallization. Appl. Phys. Lett. 103, 204103-1–204103-4 (2013)CrossRefGoogle Scholar
  11. 11.
    Kartmann, S., Koch, F., Zengerle, R., et al.: Single-use capacitive pressure sensor employing radial expansion of a silicone tube. Sens. Actuators A 247, 656–662 (2016)CrossRefGoogle Scholar
  12. 12.
    Xiong, J.J., Li, Y., Hong, Y.P., et al.: Wireless LTCC-based capacitive pressure sensor for harsh environment. Sens. Actuators A 197, 30–37 (2013)CrossRefGoogle Scholar
  13. 13.
    Rochus, V., Wang, B., Tilmans, H.A.C., et al.: Fast analytical design of MEMS capacitive pressure sensors with sealed cavities. Mechatronics 40, 244–250 (2016)CrossRefGoogle Scholar
  14. 14.
    Bochobza-Degani, O., Elata, D., Nemirovsky, Y.: Micromirror device with reversibly adjustable properties. Photonics Technol. Lett. 15(5), 733–735 (2003)CrossRefGoogle Scholar
  15. 15.
    Juan, W.H., Pang, S.W.: High-aspect-ratio Si vertical micromirror arrays for optical switching. J. Microelectromech. Syst. 7(2), 207–213 (1998)CrossRefGoogle Scholar
  16. 16.
    Nie, M., Bao, H.Q.: A theoretical model and analysis of composite membrane of a piezoresistive pressure sensor. AIP Adv. 6, 105302-1–105302-9 (2016)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2017

Authors and Affiliations

  1. 1.Key Laboratory of MEMS of Ministry of EducationSoutheast UniversityNanjingChina

Personalised recommendations