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Cluster Computing

, Volume 22, Supplement 4, pp 7815–7820 | Cite as

A pressure sensor with electrostatic self-detecting structure

  • Meng NieEmail author
  • Hengshan Yang
  • Yunhan Xia
Article
  • 186 Downloads

Abstract

A piezoresistive pressure sensor with the electrostatic self-detecting structure was developed in the paper, which can solve the issue of low efficiency and time-consuming drawbacks of the traditional method in testing and calibrating the sensor with the specialized equipment. The theoretical model of the composite membrane piezoresistive sensor was established, the analytical model of the electrostatic force driven by an electrostatic voltage was obtained, a feasible fabrication process based on flip-chip process was proposed based on the MEMS processing, the pressure sensor and its detection structure were manufactured to verify the validity of the model in the paper. From the experiment results, it can be verified that the sensitivity of the pressure sensor was 1.77 mV/hPa and the non-linearity was 1.19% respectively. At the same time, the electrostatic force used to test sensor calibration could replace the loaded pressure in the range between 110 and 500 hPa.

Keywords

Pressure sensor Piezoresistive Self-detecting Electrostatic force Flip-chip 

Notes

Acknowledgements

The authors acknowledge the National Natural Science Foundation of China (Grant No. 61474023) and the National Key Technology Support Program of China (Grant No. 2015BAF16B01).

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2017

Authors and Affiliations

  1. 1.Key Laboratory of MEMS of Ministry of EducationSoutheast UniversityNanjingChina

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