Monolithic transformer and its application in a high-speed optical interconnect VCSEL driver
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A novel vertical cavity surface emitting laser (VCSEL) driver is presented for high-speed optical interconnect. At the output stage of the driver, a transformer is used to compensate the bandwidth limitations imposed by transistors, pads and packaging parasitic. At the same time, a monolithic transformer equivalent circuit model applied in the circuit design and simulation of the VCSEL driver is proposed. Using this model, the driver has been designed and fabricated, and measurement results show that the driver with monolithic transformer compensation achieves 25% rise time and 20% fall time reduction compared to the driver without transformer. The eye diagram has been improved considerably.
KeywordsHigh-speed optical interconnect Vertical cavity surface emitting laser driver Monolithic transformer Modeling
This work is supported by the National Natural Science Foundation of China (Grant Nos. 61774129, 61704145, 61827812) and the National Natural Science Foundation of China Outstanding Young Scientists Fund Project (Grant No. 61525305).
- 1.Kuboki, T., Ohtomo, Y., Tsuchiya, A., et al. (2010). A 16 Gbps laser-diode driver with interwoven peaking inductors in 0.18-µm CMOS. In Custom integrated circuits conference (CICC), San Jose (pp. 1–4).Google Scholar
- 3.Tsai, C. M., & Chiu, M. C. (2008). A 10 Gb/s laser-diode driver with active back-termination in 0.18 μm CMOS. In Solid-state circuits conference (ISSCC), San Francisco (pp. 222–608).Google Scholar
- 4.Kuboki, T., Ohtomo, Y., Tsuchiya, A., et al. (2013). A 25-Gb/s LD driver with area-effective inductor in a 0.18-µm CMOS. In Asia and South Pacific design automation conference (ASP-DAC), Yokohama (pp. 105–106).Google Scholar
- 5.Rabii, S., Acharya, N., Chau, P., et al. (2006). An integrated VCSEL driver for 10 Gb ethernet in 0.13 µm CMOS. In Solid-state circuits conference (ISSCC), San Francisco (pp. 930–939).Google Scholar
- 6.Palermo, S., & Horowitz, M. (2006). High-speed transmitters in 90 nm CMOS for high-density optical interconnects. In Solid-state circuits conference (ISSCC), San Francisco (pp. 508–511).Google Scholar
- 7.Palermo, S., Emami-Neyestanak, A., & Horowitz, M. (2007). A 90 nm CMOS 16 Gb/s transceiver for optical interconnects. In Solid-state circuits conference (ISSCC), San Francisco (pp. 44–586).Google Scholar
- 11.Weinberg, L. (1962). Network analysis and synthesis. New York: McGraw-Hill.Google Scholar
- 15.Mayevskiy, Y. (2005). Analysis and modeling of monolithic on-chip transformers on silicon substrates. Electric transformers: Mathematical models.Google Scholar
- 20.Han, J., Choi, B., Park, K., et al. (2007). A 2.5 Gb/s ESD-protected dual-channel optical transceiver array. In Asian solid-state circuits conference (ASSCC), Jeju (pp. 156–159).Google Scholar
- 21.Lin, A. C. Y., & Loinaz, M. J. (2008). A serial data transmitter for multiple 10 Gb/s communication standards in 0.13 μm CMOS. In Solid-state circuits conference (ISSCC), San Francisco (pp. 108–599).Google Scholar