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A multi-band low noise amplifier with strong immunity to interferers

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Abstract

A multi-band low noise amplifier (LNA) is designed to operate over a wide range of frequencies (with center frequencies at 1.2, 1.7 and 2.2 GHz respectively) using an area efficient switchable \(\pi\) network. The LNA can be tuned to different gain and linearity combinations for different band settings. Depending upon the location of the interferers, a specific band can be selected to provide optimum gain and the best signal-to-intermodulation ratio. This is accomplished by the use of an on-chip built-in-self-test circuit. The maximum power gain of the amplifier is 19 dB with a return loss better than 10 dB for 7 mW of power consumption. The noise figure is 3.2 dB at 1 GHz and its third-order intercept point (\(IIP_3\)) ranges from −15 to 0 dBm. Implemented in a 0.13 \(\upmu\)m CMOS technology, the LNA occupies an active area of about 0.29 mm\(^2\). This design can be used for cognitive radio and other wideband applications, which require a dynamic configuration of the signal-to-intermodulation ratio, when sufficient information about the power and the location of the interferers is not available.

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Notes

  1. The third order intermodulation distortion ratio (\(IM_{3}\)) is quantified by the ratio of the third order intermodulation component to the fundamental tone. In published literature, \(IM_{3}\) is used to represent both the third order intermodulation power (stated in dBm) and the ratio of third order component to the fundamental (stated in dBc). In this paper, \(IM_{3}\) is used to represent the ratio and \(ID_{3}\) is used for the third order component power.

  2. For simplicity the resistances \(R_g\) and \(R_{wLs}\) present in series with inductances \(L_g\) and \(L_s\) to account for their quality factors are ignored. These are however, accounted for, during the circuit simulations used to design the LNA.

  3. If an external capacitance (\(C_{ext}\)) is added in parallel with the \(C_{gs}\) of the input NMOS transistor, the value of \(L_{g}\) can be reduced. This method however requires a large \(L_{s}\) and lowers the gain, which is quite undesirable in many applications. The use of additional components like \(C_{ext}\), however, can relax the trade-offs necessitated by (1).

  4. The low current density could result in \(IIP_3\) degradation in some cases, which can be improved by expending more power, if necessary.

  5. Taking just \(s_{11}\) into account, the LNA operates in the frequency range where \(s_{11}\) is better than −10 dB. Beyond this range, the return loss is unfeasible. However, even if \(s_{11}\) is worse than −10 dB while \(s_{21}\) is greater than 10 dB, this LNA configuration can be used in the receiver chain to provide better rejection to in-band intermodulation products. This has been experimentally proven, as described in Sect. 5.

  6. The receiver noise-figure required for bluetooth and WLAN 802.11b is 23 and 14.8 dB respectively [15].

  7. In a cognitive radio receiver, it is expected that a spectrum sensor will provide this information (architectural diagram in Fig 4).

  8. Ignoring far re-entrant modes.

  9. The magnitude of these coefficients in the designed amplifier at any particular frequency \(\omega\) is given by \((g_{m3}+g_{m4})(r_{o3}\parallel r_{o4})\sqrt{\frac{(x \omega ^2 L^2)^2+(x^2\omega L(1-\omega ^2LC)^2}{(x^2(1-\omega ^2LC)^2+\omega ^2L^2)^2}}\), where \(x=g_{m1}r_{o1}r_{o2} \parallel Q^2R_s\) and \(C=C_{L1},C_{L2},C_{L3}\).

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Authors and Affiliations

  1. Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore, KA, 560012, India

    Zaira Zahir & Gaurab Banerjee

  2. Apple Inc, Austin, TX, USA

    Mohamad A. Zeidan

  3. University of Texas, Austin, TX, USA

    Jacob A. Abraham

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  1. Zaira Zahir
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  2. Gaurab Banerjee
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Correspondence to Zaira Zahir.

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Zahir, Z., Banerjee, G., Zeidan, M.A. et al. A multi-band low noise amplifier with strong immunity to interferers. Analog Integr Circ Sig Process 93, 13–27 (2017). https://doi.org/10.1007/s10470-017-1020-5

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  • DOI: https://doi.org/10.1007/s10470-017-1020-5

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