A 1.1 V 6.2 mW, wideband RF front-end for 0 dBm blocker tolerant receivers in 90 nm CMOS

  • Naveed Ahsan
  • Christer Svensson
  • Rashad Ramzan
  • Jerzy Dabrowski
  • Aziz Ouacha
  • Carl Samuelsson


This paper presents the design and implementation of a low power, highly linear, wideband RF front-end in 90 nm CMOS. The architecture consists of an inverter-like common gate low noise amplifier followed by a passive ring mixer. The proposed architecture achieves a high linearity in a wide band (0.5–6 GHz) at very low power. Therefore, it is a suitable choice for software defined radio (SDR) receivers. The chip measurement results indicate that the inverter-like common gate input stage has a broadband input match achieving S11 below −8.8 dB up to 6 GHz. The measured single sideband noise figure at an LO frequency of 3 GHz and an IF of 10 MHz is 6.25 dB. The front-end achieves a voltage conversion gain of 4.5 dB at 1 GHz with 3 dB bandwidth of more than 6 GHz. The measured input referred 1 dB compression point is +1.5 dBm while the IIP3 is +11.73 dBm and the IIP2 is +26.23 dBm respectively at an LO frequency of 2 GHz. The RF front-end consumes 6.2 mW from a 1.1 V supply with an active chip area of 0.0856 mm2.


Blocker suppression Common gate (CG) Highly linear Low power Low IF receiver Software defined radio Wideband front-end 



The authors would like to thank Johan Brobäck at Rohde & Schwarz, Sweden and Ronny Peschel at Agilent for providing the test equipment. Special thanks are due to Stig Leijon at FOI, Sweden, for chip wire bonding.


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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • Naveed Ahsan
    • 1
  • Christer Svensson
    • 1
  • Rashad Ramzan
    • 1
  • Jerzy Dabrowski
    • 1
  • Aziz Ouacha
    • 1
  • Carl Samuelsson
    • 2
  1. 1.Linkoping UniversityLinkopingSweden
  2. 2.Swedish Defence Research AgencyLinkopingSweden

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