Analog Integrated Circuits and Signal Processing

, Volume 62, Issue 2, pp 215–222 | Cite as

Widely tunable low-power high-linearity current-mode integrator built using DG-MOSFETs

Article

Abstract

A novel tunable current-mode integrator for low-voltage low-power applications is presented using mixed-mode TCAD simulations. The design is based on independently driven double-gate (IDDG) MOSFETs, a nano-scale four-terminal device, where one gate can be used to change the characteristics of the other. Using current-mirrors built with IDDG-MOSFETs, we show that the number of active devices in the tunable current-mode integrator, 16 in bulk CMOS design, may be halved, i.e. considerable savings in both total area and power dissipation. The integrator operates with single supply voltage of 1 V and a wide range of tunable bandwidth (~2 decades) and gain (~30 dB). This linear circuit has third-order harmonic distortion as low as −70 dB in appropriate bias conditions, which can be set via the back-gates. The impact of tuning on the IDDG integrator and conventional design using symmetrically driven (SDDG) MOSFETs is comparatively studied. The proposed design is a good example for performance leverage through IDDG MOSFET architectures in analog circuits integral to future mixed-signal systems.

Keywords

CMOS analog integrated circuits Integrators DG-MOSFET SOI 

Notes

Acknowledgments

S. Kaya was supported in part by the Air Force Office of Scientific Research, under Summer Faculty Fellowship Program, during the course of this work.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Savas Kaya
    • 1
  • Hesham F. A. Hamed
    • 2
  • Anish Kulkarni
    • 1
  1. 1.School of Electrical Engineering and Computer ScienceOhio UniversityAthensUSA
  2. 2.Department of Electrical EngineeringEl-Minia UniversityEl-MiniaEgypt

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