Use of nano-scale double-gate MOSFETs in low-power tunable current mode analog circuits

  • Hesham F. A. Hamed
  • Savas Kaya
  • Janusz A. Starzyk
Article

Abstract

Use of independently-driven nano-scale double gate (DG) MOSFETs for low-power analog circuits is emphasized and illustrated. In independent drive configuration, the top gate response of DG-MOSFETs can be altered by application of a control voltage on the bottom gate. We show that this could be a powerful method to conveniently tune the response of conventional CMOS analog circuits especially for current-mode design. Several examples of such circuits, including current mirrors, a differential current amplifier and differential integrators are illustrated and their performance gauged using TCAD simulations. The topologies and biasing schemes explored here show how the nano-scale DG-MOSFETs may pave way for efficient, mismatch-tolerant and smaller circuits with tunable characteristics.

Keywords

Integrated circuits Tunable analog circuits Current mode circuits Mixed-mode simulations DG-MOSFET 

Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Hesham F. A. Hamed
    • 1
  • Savas Kaya
    • 1
  • Janusz A. Starzyk
    • 1
  1. 1.School of Electrical Engineering and Computer ScienceOhio UniversityAthensUSA

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