Optimal superior-order curvature-corrected voltage reference based on the weight difference of gate-source voltages

  • Cosmin PopaEmail author


A new curvature-correction technique for improving the temperature behavior of a CMOS voltage reference will be presented. The reducing of the temperature coefficient for the reference voltage will be realized compensating the nonlinear temperature dependence of the gate-source voltage for a MOS transistor working in weak inversion with the difference between two gate-source voltages. These MOS transistors are biased at drain currents with different temperature dependencies (PTAT and PTAT α, respectively), α parameter being selected to the optimal value for the implementing technology. The PTAT voltage generator will be designed using an original Offset Voltage Follower block, with the advantage of a reduced silicon occupied area as a result of replacing classical resistors by MOS active devices. SPICE simulation reports TC = 1.95 ppm/K for an extended temperature range, 273 K < T < 363 K, without considering the parameters spread. The circuit is compatible with low-power low-voltage designed, having a maximal power consumption of 0.4 μW for a minimal supply voltage of 1.1 V.


Offset voltage follower block Subthreshold operation Superior-order curvature-correction technique Temperature coefficient 


  1. 1.
    Filanovsky, I. M., & Chan, Y. F. (1996). BiCMOS cascaded bandgap voltage reference. In IEEE 39th Midwest Symposium on Circuits and Systems, pp. 943–946.Google Scholar
  2. 2.
    Popa, C. (2001). Curvature-compensated bandgap reference. In The 13th International Conference on Control System and Computer Science. (pp. 540–543) University “Politehnica” of Bucharest.Google Scholar
  3. 3.
    Salminen, O., & Halonen, K. (1992). The higher order temperature compensation of bandgap voltage references. In IEEE International Symposium on Circuits and Systems (pp. 1388–1391). ISCAS 1992.Google Scholar
  4. 4.
    Gunawan, M. (1993). A curvature-corrected low-voltage bandgap reference. IEEE Journal of Solid-State Circuits, 28(6), 667–670.Google Scholar
  5. 5.
    Lee, I., Kim, G., & Kim, W. (1994). Exponential curvature-compensated BiCMOS bandgap references. IEEE Journal of Solid-State Circuits, 29, 1396–1403.Google Scholar
  6. 6.
    Annema, A. J. (1998). Low-power bandgap references featuring DTMOSTs. In The 24th European Solid-State Circuits Conference (pp. 116–119). ESSCIRC 1998.Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Faculty of Electronics, Telecommunications and Information TechnologyUniversity Politehnica of BucharestBucharestRomania

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