Advertisement

Analog Integrated Circuits and Signal Processing

, Volume 49, Issue 2, pp 107–114 | Cite as

Design of low noise charge amplifier in sub-micron technology for fast shaping time

  • Paweł Gryboś
  • Marek Idzik
  • Andrzej Skoczeń
Article

Abstract

A discussion of the noise optimisation of the fast charge sensitive amplifier (CSA) for imaging systems using highly segmented semiconductor detectors is presented. In such systems a limited power dissipation per single channel is available while a good noise performance and a fast signal processing time are required. This paper describes the CSA noise optimisation for several CMOS technology generations with the minimum transistor gate length ranging from 0.13μm to 0.8μm and for a detector capacitance in the range from 0.5 pF to 12 pF. In a well-designed CSA, followed by a fast shaper stage, an equivalent noise charge (ENC) is dominated by the thermal noise of an input MOS transistor. In the applications considered the input transistor usually works in a moderate inversion region where no simple formula for the noise performance exists. Our analyses are made using a simplified EKV model and are compared with HSPICE simulations using BSIM3v3 models. We show several novel aspects of the noise optimisation of the CSA regarding the optimum transistor width and the sensitivity of the ENC to this width.

Keywords

Charge amplifier Noise Moderate inversion 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    M. Manghisoni, L. Ratti, V. Re, and V. Speziali, “Submicron CMOS technologies for low-noise analog front-end circuits.” IEEE Transactions on Nuclear Science, vol. 49, no. 4, pp. 1783–1790, 2002.CrossRefGoogle Scholar
  2. 2.
    P. O'Connor and G. De Geronimo, “Prospects for charge sensitive amplifiers in scaled CMOS.” Nuclear Instruments and Methods, vol. A480, pp. 713–725, 2002.Google Scholar
  3. 3.
    K. Korbel, “Układy elektroniki front-end.” AGH Uczelniane Wydawnictwa Naukowo-Dydaktyczne, Cracow, Poland, 2000.Google Scholar
  4. 4.
    E. Gatti and P.F. Manfredi, “Processing the signal from solid-state detectors in elementary particle physics.” La Revista del Nuovo Cimento, vol. 9, no. 1, 1986.Google Scholar
  5. 5.
    Z.Y. Chang and W. Sansen, “Effect of 1/f noise on resolution of CMOS analog readout systems for microstrip and pixel detectors.” Nuclear Instruments and Method, vol. A305, pp. 553–560, 1991.CrossRefGoogle Scholar
  6. 6.
    W. Sansen and Z.Y. Chang, “Limits on low noise performance of detector readout front ends in CMOS technology.” IEEE Transactions on Circuits and Systems, vol. 37, no. 11, pp. 1375–1382, 1990.CrossRefGoogle Scholar
  7. 7.
    E. Nygard et al., “CMOS low noise amplifier for microstrip readout. Design and results.” Nuclear Instruments and Methods, vol. A301, pp. 506–516, 1991.Google Scholar
  8. 8.
    C. Enz, F. Krummenacher, and E. Vitoz, “An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications.” Analog Integrated Circuits and Signal Processing, vol. 8, pp. 83–114, 1995.CrossRefGoogle Scholar
  9. 9.
    S.C. Terry et al., “Comparison of BSIM3v3 and EKV MOSFET model for a 0.5 μm CMOS process and implications for analog circuit design.” IEEE Transactions on Nuclear Science, vol. 50, no. 4, pp. 915–920, 2003.CrossRefGoogle Scholar
  10. 10.
    P. Grybos, “Design for a low noise of multichannel integrated circuits on example on RX64 chip.” Electronics and Telecommunication Quarterly, Polish Scientific Publishers PWN, Poland, vol. 50, no. 3, pp. 441–470, 2004.Google Scholar
  11. 11.
    P. O'Connor, J.-F. Pratte, and G. De Geronimo, “Low noise charge amplifier in submicron CMOS.” Vth International Workshop on Front End Electronics (FEE 2003) Snowmass, USA, July 2, 2003.Google Scholar
  12. 12.
    J. Kaplon, “Fast bipolar and CMOS rad-hard front end electronics for silicon strip detector.” PhD Thesis, AGH University of Science and Technology, Cracow, Poland, 2004.Google Scholar

Copyright information

© Springer Science + Business Media, LLC 2006

Authors and Affiliations

  1. 1.Faculty of Electrical Engineering, Automatics, Computer Science and ElectronicsAGH University of Science and TechnologyPoland
  2. 2.Faculty of Physics and Applied Computer ScienceAGH University of Science and TechnologyPoland

Personalised recommendations