Rapid detection of ultra-trace nanoparticles based on ACEK enrichment for semiconductor manufacturing quality control

  • Jian Zhang
  • Jian Wang
  • Jayne WuEmail author
  • Haochen Qi
  • Chunchang Wang
  • Xiaobo Fang
  • Cheng Cheng
  • Wenhua Yang
Research Paper
Part of the following topical collections:
  1. 2018 International Conference of Microfluidics, Nanofluidics and Lab-on-a-Chip, Beijing, China


Commercial fabrication of semiconductor circuits is currently conducted with nanometer resolution. As a result, trace amount of nanoparticles in semiconductor processing fluids have a great influence on the yield of semiconductor chips, which was only a minor problem in the past when semiconductors were processed at larger critical dimensions. Therefore, a highly sensitive and rapid method for the online detection of nanoparticles is highly sought after by semiconductor industry. The work presents a highly sensitive, easy to do, and rapid method for detection of nanoparticles in liquid, which is based on AC electrokinetics enhanced capacitive-sensing method using commercial microelectrode chips. The detection limit reaches as low as 0.1 part per trillion with a response time of 60 s. Testing conditions of AC voltage and frequency were also investigated to obtain the optimized test parameters. Compared with the other existing detection methods, this method is highly sensitive, of low cost and with a fast response, which is important to realize high-efficiency and -reliability quality control of semiconductor process.


Nanoparticle detection IC manufacturing AC electrokinetics Capacitance sensing 



This work was supported by The University of Tennessee Initiative for PON/POC Nanobiosensing, Institute for a Secure and Sustainable Environment, and the US NSF CPS/USDA NIFA (Grant no. 2017-67007-26150). J. Wu also acknowledges the support of National Natural Science Foundation of China (Grant no. 51728502). This work was also supported by the open research fund of Key Laboratory of MEMS of Ministry of Education, Southeast University, China.

Supplementary material

10404_2018_2167_MOESM1_ESM.docx (352 kb)
Supplementary material 1 (DOCX 351 KB)


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.School of Electronic Science and Applied Physics, Hefei University of TechnologyHefeiChina
  2. 2.Department of Electrical Engineering and Computer ScienceThe University of TennesseeKnoxvilleUSA
  3. 3.Laboratory of Dielectric Functional Materials, School of Physics and Material ScienceAnhui UniversityHefeiChina
  4. 4.Department of Engineering and Technology ManagementMorehead State UniversityMoreheadUSA

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