A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors
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High-performance low-k and low-loss circuit materials are urgently needed in the field of microelectronics due to the upcoming Fifth-Generation Mobile Communications Technology (5G Technology). Herein, a facile design strategy for non-fluorinated intrinsic low-k and low-loss polyimides is reported by fully considering the secondary relaxation behaviors of the polymer chains. A new amorphous non-fluorinated polymer (TmBPPA) with a k value of 2.23 and a loss tangent lower than 3.94 × 10−3 at 104 Hz has been designed and synthesized, which to the best of our knowledge is the lowest value amongst the non-fluorinated and non-porous polymers reported in literature. Meanwhile, TmBPPA exhibits excellent overall properties, such as excellent thermostability, good mechanical properties, low moisture absorption, and high bonding strength. As high-performance flexible circuit materials, all these characteristics are highly expected to meet the present and future demands for high density, high speed, and high frequency electronic circuit used in 5G wireless networks.
KeywordsLow-k Free volume Secondary relaxation
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This work was finincially supported by the National Natural Science Foundation of China (Nos. 51373204 and 51873239), the National 973 Program of China (No. 2014CB643605), the Science and Technology Project of Guangdong Province (Nos. 2015B090915003 and 2015B090913003), the Leading Scientific, Technical and Innovation Talents of Guangdong Special Support Program (No. 2016TX03C295), the China Postdoctoral Science Foundation (No. 2017M612801), and the Fundamental Research Funds of Sun Yat-sen University.
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