Optical Review

, Volume 16, Issue 3, pp 269–273

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

  • Yoshiaki Sugimoto
  • Nobuhiro Tsumori
  • Shintaro Nomura
  • Toshiharu Saiki
Regular Papers

Abstract

Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.

Keywords

photoluminescence imaging spectroscopy interfacial fluctuation quantum dot near-field scanning microscope multi exciton charged exciton finite-difference time-domain calculation method 

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Copyright information

© The Optical Society of Japan 2009

Authors and Affiliations

  • Yoshiaki Sugimoto
    • 1
  • Nobuhiro Tsumori
    • 1
  • Shintaro Nomura
    • 2
  • Toshiharu Saiki
    • 1
    • 3
  1. 1.School of Integrated Design EngineeringKeio UniversityYokohamaJapan
  2. 2.Institute of PhysicsUniversity of TsukubaTsukuba, IbarakiJapan
  3. 3.Kanagawa Academy of Science and TechnologyKawasakiJapan

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