Abstract
The electrochemical response of thin non-doped diamond-like carbon films grown by pulsed laser deposition onto n-type (P-doped) silicon substrates was studied using different redox-active couples. The experiments were conducted as a function of the film thickness which can be controlled by the deposition time. It could be demonstrated that the film thickness greatly influences the electrochemical response and the electron transference rate at the surface, thus reaching an optimal response for films with a thickness of around 35 nm. This holds true for all redox couples studied. Those films show rather similar properties compared to boron-doped diamond electrodes, thus becoming an interesting coating to be studied as electrochemical electrode.
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Funding
This material is based upon work supported by the Air Force Office of Scientific Research under award number FA9550-16-1-0384 and has been funded by the Fondo Nacional de Desarrollo Científico y Tecnológico, FONDECYT 1161614 and 1141119. B. Durán acknowledges postdoctoral project FONDECYT 3170784. A. Rosenkranz gratefully acknowledges the financial support for his postdoctoral project given by CIENUC.
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Hevia, S.A., Bejide, M., Duran, B. et al. Nanometric thin films of non-doped diamond-like carbon grown on n-type (P-doped) silicon substrates as electrochemical electrodes. J Solid State Electrochem 22, 2845–2853 (2018). https://doi.org/10.1007/s10008-018-4002-3
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DOI: https://doi.org/10.1007/s10008-018-4002-3