Applied Magnetic Resonance

, Volume 47, Issue 7, pp 671–684 | Cite as

About anomalous g factor value of Mn-related defects in GaAs:Mn

  • S. M. YakubenyaEmail author
  • K. F. Shtel’makh


The results of experimental investigations of electron spin resonance (ESR) spectra of manganese impurity ions in a GaAs:Mn system are presented. The studies are done for various a Fermi level position relative to valence band edge in the system. Characteristic defects for the system that give rise to lines with g factors of 5.62 and 2.81 in the ESR spectra are studied in some detail. The experimental results are discussed in the framework of a previously developed model with a double defect involving the impurity ion. The “3d5 + hole” model is a special case of the double defect model in this system. An analytical expression for the covalent renormalization of the g factor of an ESR line in this system is obtained.


GaAs Electron Spin Resonance Electron Spin Resonance Spectrum Gallium Arsenide Electron Spin Resonance Line 
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Copyright information

© Springer-Verlag Wien 2016

Authors and Affiliations

  1. 1.NRC “Kurchatov Institute”MoscowRussia
  2. 2.St. Petersburg State Polytechnic UniversitySt. PetersburgRussia
  3. 3.Ioffe InstituteSt. PetersburgRussia

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