EDESR and ODMR of Impurity Centers in Nanostructures Inserted in Silicon Microcavities
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We present the first findings of the new electrically and optically detected magnetic resonance technique [ED electron spin resonance (EDESR) and ODMR], which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring only the magnetoresistance (EDESR) and transmission (ODMR) spectra within the frameworks of the excitonic normal-mode coupling caused by the microcavities embedded in the Si-QW plane. The new resonant positive magnetoresistance data are interpreted here in terms of the interference transition in the diffusive transport of free holes, respectively, between the weak antilocalization regime in the region far from the ESR of a paramagnetic point defect located inside or near the conductive channel and the weak localization regime in the nearest region of the ESR of that defect.
KeywordsScanning Tunneling Microscopy Image External Cavity Edge Channel Momentum Relaxation Time Rabi Splitting
The work was supported by the Programme of Fundamental Studies of the Presidium of the Russian Academy of Sciences “Quantum Physics of Condensed Matter” (grant 9.12), Programme of the Swiss National Science Foundation (grant IZ73Z0_127945/1) and the Federal Targeted Programme on Research and Development in Priority Areas for the Russian Science and Technology Complex in 2007–2012 (contract no. 02.514.11.4074).
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