Monatshefte für Chemie - Chemical Monthly

, Volume 140, Issue 6, pp 595–600 | Cite as

Oxygen evolution: the mechanism of formation of porous anodic alumina

Orignal Paper
First Online:
Received:
Accepted:

Abstract

Aluminium anodization behavior in ammonium sebacate solution (w = 4%) in ethylene glycol, and in several H3PO4-containing electrolytes, has been investigated. A new mechanism is proposed for the formation of porous anodic films. The model emphasizes the close relationship between pore generation and oxygen evolution. PO4 3− ions incorporated in the anodic films behave as the primary source of avalanche electrons. It is the avalanche electronic current through the barrier film that causes oxygen evolution during anodization. When growth of anodic oxide and oxygen evolution occur simultaneously at the aluminium anode, cavities or pores are formed in the resulting films. Accordingly, the mechanisms of growth of barrier and porous films are not very different in nature. These findings are a decisive new step towards full understanding of the nature of anodic alumina films.

Graphical abstract

Keywords

Porous anodic alumina Nanostructures Microporous materials Formation mechanism Oxygen evolution 
This is a preview of subscription content, log in to check access.

References

  1. 1.
    Masuda H, Fukuda K (1995) Science 268:1466CrossRefGoogle Scholar
  2. 2.
    Yanagishita T, Sasaki M, Nishio K, Masuda H (2004) Adv Mater 16:429CrossRefGoogle Scholar
  3. 3.
    Whitney TM, Searson PC, Jiang JS, Chien CL (1993) Science 261:1316CrossRefGoogle Scholar
  4. 4.
    Taberna PL, Mitra S, Poizot P, Simon P, Tarascon J-M (2006) Nat Mater 5:567CrossRefGoogle Scholar
  5. 5.
    Chu SZ, Wada K, Inoue S, Todoroki S (2002) Chem Mater 14:266CrossRefGoogle Scholar
  6. 6.
    Matsumoto F, Nishio K, Masuda H (2004) Adv Mater 16:2105CrossRefGoogle Scholar
  7. 7.
    Keller F, Hunter MS, Robinson DL (1953) J Electrochem Soc 100:411CrossRefGoogle Scholar
  8. 8.
    Spooner RC, Forsyth WJ (1963) Nature 200:1002CrossRefGoogle Scholar
  9. 9.
    Thompson GE, Wood GC (1981) Nature 290:230CrossRefGoogle Scholar
  10. 10.
    Parkhutik VP, Shershulsky VI (1992) J Phys D Appl Phys 25:1258CrossRefGoogle Scholar
  11. 11.
    Jessensky O, Muller F, Gösele U (1998) J Electrochem Soc 145:3735CrossRefGoogle Scholar
  12. 12.
    Thompson GE (1997) Thin Solid Films 297:192CrossRefGoogle Scholar
  13. 13.
    Lee W, Ji R, Gösele U, Nielsch K (2006) Nat Mater 5:741CrossRefGoogle Scholar
  14. 14.
    Li F, Zhang L, Metzger RM (1998) Chem Mater 10:2470CrossRefGoogle Scholar
  15. 15.
    Masuda H, Hasegwa F, Ono S (1997) J Electrochem Soc 144:L127CrossRefGoogle Scholar
  16. 16.
    Macdonald DD (1993) J Electrochem Soc 140:L27CrossRefGoogle Scholar
  17. 17.
    Crevecoeur C, de Wit HJ (1987) J Electrochem Soc 134:808CrossRefGoogle Scholar
  18. 18.
    Zhuravlyova E, Iglesias-Rubianes L, Pakes A, Skeldon P, Thompson GE, Zhou X, Quance T, Graham MJ, Habazaki H, Shimizu K (2002) Corros Sci 44:2153CrossRefGoogle Scholar
  19. 19.
    Li Y, Shimada H, Sakairi M, Shigyo K, Takahashi H, Seo M (1997) J Electrochem Soc 144:866CrossRefGoogle Scholar
  20. 20.
    Zhu XF, Li DD, Song Y, Xiao YH (2005) Mater Lett 59:3160CrossRefGoogle Scholar
  21. 21.
    Liu Y, Alwitt RS, Shimizu K (2000) J Electrochem Soc 147:1382CrossRefGoogle Scholar
  22. 22.
    Zhu XF, Liu L, Song Y, Jia HB, Yu HD, Xiao XM, Yang XL (2008) Monatsh Chem 139:999CrossRefGoogle Scholar
  23. 23.
    Albella JM, Montero I, Martinez-Duart JM (1987) Electrochim Acta 32:255CrossRefGoogle Scholar
  24. 24.
    Patermarakis G, Masavetas K (2006) J Electroanal Chem 588:179CrossRefGoogle Scholar
  25. 25.
    Song Y, Zhu XF, Wang X, Che J, Du Y (2001) J Appl Electrochem 31:1273CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  1. 1.School of Chemical EngineeringNanjing University of Science and TechnologyNanjingChina

Personalised recommendations