Microsystem Technologies

, Volume 5, Issue 1, pp 13–17

Mechanical stress measurements using micro-Raman spectroscopy

  • I. De Wolf
  • H. E. Maes

Abstract

 The application of micro-Raman spectroscopy for measurements of mechanical stress in silicon microelectronics devices is discussed. The advantages and disadvantages of the technique are shown through different examples such as Si3N4 and metal lines, isolation structures and solder bumps.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1998

Authors and Affiliations

  • I. De Wolf
    • 1
  • H. E. Maes
    • 1
  1. 1.IMEC, Kapeldreef 75, B-3001 Leuven, BelgiumBE

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