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Microsystem Technologies

, Volume 7, Issue 4, pp 183–187 | Cite as

Micro materials modeling in MINIMOS-NT

  • V. Palankovski
  • S. Selberherr

Abstract

 Considerable effort was spent on our two-dimensional device simulator MINIMOS-NT to get it ready for simulation of devices with high complexity in respect to materials, geometries, etc. Many of the existing physical models (band gap, mobility, thermal conductivity, energy relaxation times, specific heat, etc.) were refined, some of them were replaced by promising new ones, and many new models were added as well. Being an ancestor of the well-known MOS device simulator MINIMOS [1], its experience with Si devices was inherited. Thereby, MINIMOS-NT became a generic device simulator accounting for a variety of micro-materials, including group IV semiconductors, III-V compound semiconductors and their alloys, and non-ideal dielectrics.

Keywords

Thermal Conductivity Relaxation Time Physical Model Material Modeling Considerable Effort 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2001

Authors and Affiliations

  • V. Palankovski
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for Microelectronics, TU Vienna Gusshausstrasse 27–29, A-1040 Vienna, Austria E-mail: vassil.palankovski@iue.tuwien.ac.atAT

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