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Compact high isolation and improved bandwidth hybrid RF MEMS SPDT switch for 5G applications

  • AnuroopEmail author
  • Deepak Bansal
  • Prem Kumar
  • Amit Kumar
  • Ashudeep Minhas
  • Khushbu Mehta
  • Maninder Kaur
  • Kamaljit Rangra
Technical Paper

Abstract

Fifth generation (5G) communication system enables the pathway for a higher data transfer rate. The frequency bands used for 5G communication system are distributed from lower frequency range (600 MHz) to a higher frequency range (60 GHz). So it is necessary that a single switch should be able to cover the complete range of 5G frequency bands. The ohmic radio frequency-micro electromechanical system (RF-MEMS) switch has offered high isolation at lower frequencies (> 40 dB up to 2.5 GHz). However, 5G requires a higher frequency range which is covered by capacitive switch. The capacitive switch has limitations of limited bandwidth and large size. In this paper, a hybrid technique is used for the designing of a compact, high isolation and the enhanced bandwidth SPDT RF MEMS switch for 5G applications. The size of the proposed switch is half from the conventional capacitive RF MEMS switch and offer greater than 40 dB isolation over a wide frequency range (> 40 dB over 22.10 GHz bandwidth) with less than 0.30 dB insertion loss over the entire band.

Notes

Acknowledgements

Author would like to thank Council of Scientific and Industrial Research (CSIR), India for providing financial assistance throughout the project MLP-105 and providing CSIR-SRF Fellowship.

Compliance with ethical standards

Conflict of interest

Author declares no conflict of interest.

References

  1. Bakri-Kassem M, Mansour RR (2015) High power latching RF MEMS switches. IEEE Trans Microw Theory Tech 63(1):222–232CrossRefGoogle Scholar
  2. Bansal D, Bajpai A, Prem Kumar M, Kaur M, Rangra K (2016) Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch. J Micro/Nanolithography 15(4):45001CrossRefGoogle Scholar
  3. Cui X, Gulliver TA, Li J, Zhang H (2016) Vehicle positioning using 5G millimeter-wave systems. IEEE Access 4:6964–6973CrossRefGoogle Scholar
  4. Daneshmand M, Yan WD, Mansour RR (2007) Thermally actuated multiport rf mems switches and their performance in a vacuumed environment. IEEE Trans Microw Theory Tech 55(6):1229–1236CrossRefGoogle Scholar
  5. Dyck CW et al (2004) Fabrication and characterization of ohmic contacting RF MEMS switches. Int Soc Optics Photon 5344:5310–5344Google Scholar
  6. Ercan AÖ, Sunay MO, Akyildiz IF (2018) RF energy harvesting and transfer for spectrum sharing cellular IoT communications in 5G systems. IEEE Trans Mob Comput 17(7):1680–1694CrossRefGoogle Scholar
  7. Ilkhechi AK, Mirzajani H, Aghdam EN, Ghavifekr HB (2015) A novel electrostatically actuated SPDT rotary RF MEMS switch for ultra-broadband applications. In: ICEE 2015—Proc. 23rd Iran. Conf. Electr. Eng., vol. 10, pp. 1175–1179Google Scholar
  8. Liu Y, Bey Y, Liu X (2017) High-power high-isolation rf-mems switches with enhanced hot-switching reliability using a shunt protection technique. IEEE Trans Microw Theory Tech 65(9):3188–3199CrossRefGoogle Scholar
  9. Meniconi E, Schoenlinner B, Prechtel U, Hartmann J, Sorrentino R, Ziegler V (2011) Broadband RF -MEMS based switching network for automated measurements of multifeed antennas. In: 2011 6th Eur. Microw. Integr. Circuit Conf., no. October, pp. 1237–1240Google Scholar
  10. Mirzajani H, Ilkhechi AK, Zolfaghari P, Azadbakht M, Aghdam EN, Ghavifekr HB (2017) Power efficient, low loss and ultra-high isolation RF MEMS switch dedicated for antenna switch applications. Microelectronics J. 69(June):64–72CrossRefGoogle Scholar
  11. Mowla MM, Ahmad I, Habibi D, Phung QV (2017) A green communication model for 5G systems. IEEE Trans Green Commun Netw 1(3):264–280CrossRefGoogle Scholar
  12. Rebeiz GM (2003) RF MEMS: theory, design, and technology. 2003Google Scholar
  13. Simsek M, Aijaz A, Dohler M, Sachs J, Fettweis G (2016) 5G-enabled tactile internet. IEEE J Sel Areas Commun 34(3):460–473CrossRefGoogle Scholar
  14. Yamane D, Sun W, Seita H, Kawasaki S, Fujita H, Toshiyoshi H (2011) A ku-band dual-SPDT RF-MEMS switch by double-side SOI bulk micromachining. J. Microelectromech Syst. 20(5):1211–1221CrossRefGoogle Scholar
  15. Zhang S, Su W, Zaghloul M, Thibeault B (2008) Wideband CMOS compatible capacitive MEMS switch for RF applications. IEEE Microw Wirel Comp Lett 18(9):599–601CrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Anuroop
    • 1
    • 2
    Email author
  • Deepak Bansal
    • 1
    • 2
  • Prem Kumar
    • 1
  • Amit Kumar
    • 1
    • 2
  • Ashudeep Minhas
    • 1
  • Khushbu Mehta
    • 1
    • 2
  • Maninder Kaur
    • 1
  • Kamaljit Rangra
    • 1
    • 2
  1. 1.CSIR-Central Electronics Engineering Research InstitutePilaniIndia
  2. 2.Academy of Science and Innovative Research (AcSIR)GhaziabadIndia

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