Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps

  • Nisha ChughEmail author
  • Manoj Kumar
  • Monika Bhattacharya
  • R. S. Gupta
Technical Paper


An analytical approach incorporating traps (donor type) in the AlGaN layer at the top and bottom heterointerface is proposed to determine threshold voltage (Vth), net sheet carrier concentration (ns) and drain current in Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double-heterostructure (DH) high electron mobility transistor (HEMT). Generation of carriers in the 2DEG due to detrapping of these donor traps have been thoroughly studied in the present analysis. Due to traps in the upper and lower AlGaN layer, two 2DEG channels formed, such that ns in a DH-HEMT is nearly twice as compared to that obtained in single heterostructure (SH). Due to increased 2DEG density, drain current is more in DH-HEMT as compared to SH-HEMT. The effect of incorporation of these donor traps on Vth, ns and drain current of DH-HEMT as compared to SH-HEMT has been studied. The effect of Al mole fraction, AlGaN layer thickness, mobility, trap concentration and temperature on drain current of DH-HEMT as compared to SH-HEMT has also been studied. The analysis has been performed considering both, undoped structure (in which traps only contribute to 2DEG formation) and a doped structure (in which the traps as well as the donors from the doped layer contribute to 2DEG formation).



Authors are thankful to the Defence Research and Development Organisation (DRDO), Ministry of Defence (Govt. of India) for providing financial assistance under the grant ERIP/P/ER/DG-Med & CoS/991115506/M/01/1663 to carry out this research work.


  1. Ambacher O, Smart J, Shealy JR, Wiemann NG, Chu K, Murphy M, Schaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J (1999) Two dimensional electron gas induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J Appl Phys 85(6):3222–3233CrossRefGoogle Scholar
  2. ATLAS (2018) 2D Device Simulator. Silvaco InternationalGoogle Scholar
  3. Bhattacharya M, Jogi J, Gupta RS, Gupta M (2012) An accurate charge-control-based approach for noise performance assessment of a symmetric tied-gate InAlAs/InGaAs DG-HEMT. IEEE Trans Electron Devices 59:1644–1652CrossRefGoogle Scholar
  4. Binari SC, Klein PB, Kazior TE (2002) Trapping effects in GaN and SiC microwave FETs. Proc IEEE 90(6):1048–1058CrossRefGoogle Scholar
  5. Chugh N, Bhattacharya M, Kumar M, Gupta RS (2017) Sheet Carrier concentration and threshold voltage modeling of asymmetrically doped AlGaN/GaN/AlGaN Double Heterostructure HEMT. In: UPCON, pp 446–451, Oct, 2017Google Scholar
  6. Chugh N, Bhattacharya M, Kumar M, Gupta RS (2017) Impact of temperature and Al composition on the threshold voltage and sheet carrier concentration of AlmGa1-mN/GaN/AlmGa1-mN double heterostructure HEMT. In: Accepted for publication in Springer proceedings in XIXth IWPSD, 2017Google Scholar
  7. Chugh N, Bhattacharya M, Kumar M, Deswal SS, Gupta RS (2018) Polarization dependent charge control model for microwaveperformance assessment of AlGaN/GaN/AlGaN double heterostructureHEMTs. J Comput Electron 17(3):1229–1240CrossRefGoogle Scholar
  8. Du J, Chen N, Jiang Z, Bai Z, Liu Y, Liu Y, Yu Q (2016) Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate. Solid State Electron 115:60–64CrossRefGoogle Scholar
  9. Gangwani P, Pandey S, Haldar S, Gupta M, Gupta RS (2007) Polarization dependent analysis of AlGaN/GaN HEMT for high power applications. Superlattices Microstruct 51:130–135Google Scholar
  10. Ghaffari M, Orouji AA (2016) Dual trench AlGaN/GaN HEMT on SiC substrate” A novel device to improve the breakdown voltage and high power performance. Phys E 80:108–114CrossRefGoogle Scholar
  11. Green BM, Tilak V, Kaper VS, Smart JA, Shealy JR, Eastman LF (2003) Microwave power limits ofAlGaN/GaN HEMTs underpulsed-bias conditions. IEEE Trans Microw Theory Tech 51(2):618–623CrossRefGoogle Scholar
  12. Huque MA, Eliza SA, Rahman T, Huq HF, Islam SK (2009) Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT. Solid State Electron 53:341–348CrossRefGoogle Scholar
  13. Ibbetson JP, Fini PT, Ness KD, DenBaars SP, Speck JS, Mishra UK (2000) Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Appl Phys Lett 77:250–252CrossRefGoogle Scholar
  14. Jogi J, Sen S, Gupta M, Gupta RS (2001) Carrier concentration dependent low-field mobility model for InAlAs/InGaAs/InP lattice-matched HEMT for microwave application. Microw Opt Tech Lett 29(1):66–70CrossRefGoogle Scholar
  15. Kuzuhara M, Asubar JT, Tokuda H (2016) AlGaN/GaN high-electron-mobility transistor technologyfor high-voltage and low-on-resistance operation. Jpn J Appl Phys 55:070101(1-12)CrossRefGoogle Scholar
  16. Min-Han M, Kai Z, Xing C, Sheng-Lei Z, Chong W, Jin-Cheng Z, Xiao-Hua M, Yue H (2014) Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage. Chin Phys B 23(7):077304-1–077304-4Google Scholar
  17. Peng E, Wang X, Xiao H, Wang C, Yin H, Chen H, Feng C, Jiang L, Hou X, Wang Z (2013) Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers. J Cryst Growth 383:25–29CrossRefGoogle Scholar
  18. Rohdin H, Roblin P (1986) A MODFET dc model with Improved Pinchoff and saturation characteristics. ITED ED-33(5):664–672Google Scholar
  19. Smorchkova IP, Elsass CR, Ibbetson JP, Vetury R, Heying B, Fini P, Haus E, DenBaars SP, Speck JS, Mishra UK (1999) Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grownby plasma assisted molecular beam epitaxy. J Appl Phys 86:4520–4526CrossRefGoogle Scholar
  20. Yang Jie, Sharon Cui TP, Ma Hung T-H, Nath D, Krishnamoorthy S, Rajan S (2013) Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors. App Phys Lett 103:223507(1)–223507(4)Google Scholar

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© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.University School of Information, Communication and TechnologyGuru Gobind Singh Indraprastha UniversityNew DelhiIndia
  2. 2.Department of Electronics, Acharya Narendra Dev CollegeUniversity of DelhiNew DelhiIndia
  3. 3.Department of Electronics and Communication EngineeringMaharaja Agrasen Institute of TechnologyNew DelhiIndia

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