Microsystem Technologies

, Volume 24, Issue 5, pp 2317–2324 | Cite as

Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs

  • Kalyan Biswas
  • Angsuman Sarkar
  • Chandan Kumar Sarkar
Technical Paper
First Online:
Received:
Accepted:
  • 52 Downloads

Abstract

The non-planar 3D structure of multi-gate FinFETs makes them able to be scaled down to 20 nm and beyond and also have greater performance. But any variation of the fin cross-sectional shape has an impact on the device performance. In this paper, the impact of various fin cross-sectional shape on junctionless accumulation mode bulk FinFETs with thin fins and short channel length has been evaluated. Different important device performance parameters such as ON-current (ION), OFF current (IOFF), ratio of ON/OFF current, Threshold voltage (Vth), Subthreshold swing (SS), drain-induced barrier lowering (DIBL), transconductance (gm), transconductance generation factor (gm/Ids), cut-off frequency (fT), and maximum oscillation frequency (fmax) is evaluated for different fin shapes and analyzed. From the analysis, it is understood that shape of the fin cross-section has substantial impact on performance of the device. Improvement in SCEs was noticed in terms of ~ 25% reduction of DIBL and ~ 10% reduction in SS for the device with reduced fin top width. On the other hand, reduced fin top width degrades the RF performance as maximum frequency of oscillation decrease by ~ 10%. An optimal fin structure for the junctionless bulk FinFET is also obtained to have better SCEs and reasonable Analog/RF applications.

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Kalyan Biswas
    • 1
  • Angsuman Sarkar
    • 2
  • Chandan Kumar Sarkar
    • 3
  1. 1.ECE DepartmentMCKV Institute of EngineeringLiluahIndia
  2. 2.Kalyani Government Engineering CollegeKalyaniIndia
  3. 3.Nano Device Simulation Laboratory, ETCE DepartmentJadavpur UniversityKolkataIndia

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