Microsystem Technologies

, Volume 24, Issue 5, pp 2379–2387 | Cite as

Multiport RF MEMS switch for satellite payload applications

  • M. Bala Subramanian
  • C. Joshitha
  • B. S. Sreeja
  • Prita Nair
Technical Paper
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Abstract

Design, fabrication and characterization of a novel RF switch is proposed in this paper. The multiport RF MEMS switch provides a single input multiple output novel topology suitable for satellite payload applications. A single ETA is used to switch the device from one mode to another. When a voltage difference is applied across the electrode pads of ETA, and depending on the configuration, the actuator actuates forward or backward in plane producing either a quad or dual output respectively. The reflection loss and insertion loss are improved effectively. Measurement results show that in `dual mode’ position, the input reflection coefficient (S 11) is less than − 50 dB with the forward transmission coefficient (S 21) better than − 2 dB at 0–15 GHz. At ‘quad mode’, position, the input reflection coefficient (S 11) is less than − 55 dB with the forward transmission coefficient (S 21) better than − 4 dB at 0–15 GHz. The larger than 50 dB over 0–15 GHz isolation realized in both modes of operation ensures dual and quad mode outputs without information loss. The actuation voltage is reduced to 4.5 V. The measured power handling capability can reach up to 35 dBm while the power consumption of the switch is 50 mW. This compact RF MEMS capacitive switch possesses excellent performances in terms of low insertion loss, high isolation, low power and high power handling capability.

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Notes

Acknowledgements

The team at SSN would like to acknowledge with thanks the huge effort put in by Ms Veda and her team from NMIT in coordinating the whole SOIMUMPS community chip program. We express our sincere thanks to NPMASS, the coordinators from IISc Bangalore Dr. K.J.Vinoy, Dr. Navakanth Bhat, Dr Rudra Prathap, Dr. G Ananthasuresh and also the whole team at CeNSE for theier support to conduct the device characterization. The authors also acknowledge the co-operation of HCL Technologies Ltd to carry out the S-parameter measurement of the proposed RF MEMS switch.

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2017

Authors and Affiliations

  • M. Bala Subramanian
    • 1
  • C. Joshitha
    • 1
  • B. S. Sreeja
    • 1
  • Prita Nair
    • 1
  1. 1.Sri Sivasubramaniya Nadar College of EngineeringChennaiIndia

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