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Microsystem Technologies

, Volume 22, Issue 5, pp 1055–1066 | Cite as

Fabrication and characterisation of bulk micromachined ZnO energy transducer with interdigitated electrodes

  • Priya Chhabra
  • Anurekha Sharma
  • N. P. Vamsi Krishna
Technical Paper

Abstract

The proposed research work deals with the design, fabrication and characterisation of a ZnO cantilever energy transducer on Si(c) without the use of SOI wafers, thereby, reducing the cost of fabrication. The energy transducer is operated in the longitudinal mode through the interdigitated electrodes. This is for the first time, we have attempted to fabricate a cantilever transducer with interdigitated electrodes on Si(c) in our lab. The design frequency has been chosen in the range of 700–1000 Hz for a typical tire pressure monitoring system application in mind. The experimentally obtained frequency is 876.25 Hz and d33 was calculated as 3.9 pC/N from the measurements. The experimental results are further validated by simulation and the feasibility of its application as energy harvester is demonstrated. The fabrication process is being optimised to fabricate devices with higher piezoelectric coefficients.

Keywords

Energy Harvester Plasma Enhance Chemical Vapour Deposition Interdigitated Electrode Piezoelectric Energy Piezoelectric Energy Harvester 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The design part of this research work was done at NPMASS MEMS Design Centre, Department of Electronic Science, Kurukshetra University. This research (or a portion thereof) was performed through INUP using facilities at CeNSE, funded by Department of Electronics and Information Technology (DeitY), Govt. of India, and located at Indian Institute of Science, Bangalore. One of the authors (Priya Chhabra) would like to thank Arjun Shetty, ECE, IISc for helpful discussions and Pavandeep V, Radha Bhaskaran, CeNSE, IISc for help with the fabrication.

Conflict of interest

Authors have no conflict of interests.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  • Priya Chhabra
    • 1
  • Anurekha Sharma
    • 1
    • 2
  • N. P. Vamsi Krishna
    • 3
  1. 1.Department of Electronic ScienceKurukshetra UniversityKurukshetraIndia
  2. 2.Tyndall National InstituteUCCCorkIreland
  3. 3.Centre for Nano Science and EngineeringIndian Institute of ScienceBangaloreIndia

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