Microsystem Technologies

, Volume 18, Issue 11, pp 1917–1922 | Cite as

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

  • Lan Zhang
  • Yang Ju
  • Atsushi Hosoi
  • Akifumi Fujimoto
Technical Paper


The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.


Oxide Layer Measured Voltage Standoff Distance Dielectric Film Microwave Signal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was supported by the Japan Society for the Promotion of Science under Grants-in-Aid for Scientific Research (A) 23246024.


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Copyright information

© Springer-Verlag 2012

Authors and Affiliations

  • Lan Zhang
    • 1
  • Yang Ju
    • 1
  • Atsushi Hosoi
    • 1
  • Akifumi Fujimoto
    • 1
  1. 1.Department of Mechanical Science and EngineeringNagoya UniversityNagoyaJapan

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