Microsystem Technologies

, Volume 16, Issue 10, pp 1713–1717

RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

  • Farahiyah Mustafa
  • Norfarariyanti Parimon
  • Abdul Manaf Hashim
  • Shaharin Fadzli Abd Rahman
  • Abdul Rahim Abdul Rahman
  • Mohd Nizam Osman
Technical Paper

Abstract

The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

References

  1. Hasegawa H (2003) Formation of III-IV low dimensional structures and their applications to intelligent quantum chips. Microelectronics J 34(5):341–345CrossRefGoogle Scholar
  2. Hashim AM, Kasai S, Hashizume T, Hasegawa H (2007a) Novel structure of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifier. Microelectronics J 38(12):1268–1272Google Scholar
  3. Hashim AM, Kasai S, Hashizume T, Hasegawa H (2007b) Integration of interdigital-gated plasma wave device for proximity communication system application. Microelectronics J 38(12):1263–1267Google Scholar
  4. Hashim AM, Kasai S, Hasegawa H (2008) Observation of third harmonics response in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction. Superlattices Microstruct 44:754–760CrossRefGoogle Scholar
  5. Jeon W, Firestone TM, Rodgers JC, Melngailis J (2004) Design and fabrication of Schottky diode on-chip RF power detector. Solid State Electron 48:2089–2093CrossRefGoogle Scholar
  6. Milanovic V, Gaitan M, Marshall JC, Zaghloul ME (1996) CMOS foundry implementation of Schottky diodes for RF detection. IEEE Trans Electron Devices 43:2210–2214CrossRefGoogle Scholar
  7. Mustafa F, Hashim AM, Parimon N, Rahman SFA, Rahman ARA, Osman MN (2009) RF characterization of planar dipole antenna for on-chip integration with GaAs-based Schottky diode. Asia-Pacific microwave conference, SingaporeGoogle Scholar
  8. Sharma BL (1984) Metal-semiconductor schottky barrier junctions and their applications. Plenum Press, New York, p 20Google Scholar
  9. Suh YH, Chang K (2002) A high-efficiency dual-frequency rectenna for 2.45- and 5.8-GHz wireless power transmission. IEEE Trans Microw Theory Tech 50(7):1784–1789CrossRefGoogle Scholar
  10. Wen CP (1969) Coplanar waveguide: a surface strip transmission line suitable for nonreciprocal gryromagnetic device applications. IEEE Trans Microw Theory Tech MTT-17(12):1087–1088CrossRefGoogle Scholar
  11. Zhang DH (1999) Metal contacts to n-type AlGaAs grown by molecular beam epitaxy. Mater Sci Eng B 60:189–193CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  • Farahiyah Mustafa
    • 1
  • Norfarariyanti Parimon
    • 1
  • Abdul Manaf Hashim
    • 1
  • Shaharin Fadzli Abd Rahman
    • 1
  • Abdul Rahim Abdul Rahman
    • 1
  • Mohd Nizam Osman
    • 2
  1. 1.Material Innovations and Nanoelectronics Research Group, Faculty of Electrical EngineeringUniversiti Teknologi MalaysiaUTM SkudaiMalaysia
  2. 2.Telekom Research & DevelopmentTM Innovation CentreCyberjayaMalaysia

Personalised recommendations