Advertisement

Microsystem Technologies

, Volume 12, Issue 10–11, pp 1021–1025 | Cite as

Gold metallizations for eutectic bonding of silicon wafers

  • S. LaniEmail author
  • A. Bosseboeuf
  • B. Belier
  • C. Clerc
  • C. Gousset
  • J. Aubert
Technical paper

Abstract

Gold eutectic bonding of silicon wafers is a good candidate for wafer level vacuum packaging of vibrating MEMS: in this paper we investigated several e-beam evaporated metallizations stacks including a titanium adhesion layer, an optional diffusion barrier (Ni or Pt) and a gold film for eutectic bonding on Si and SiO2/Si wafers. Interdiffusion in the multilayers for annealing temperatures (380–430°C) larger than the Au–Si eutectic temperature (363°C) and times corresponding to a bonding process was characterized by RBS, roughness and resistivity measurements. Au/Pt/Ti and Au/Ti/SiO2 were found to have the best characteristics for bonding. This was confirmed by bonding experiments.

Keywords

Silicon Wafer Gold Film Rutherford Backscatter Spectroscopy Gold Metallization Wafer Bonding 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. Corman T, Enoksson P, Stemme G (1998) Low-pressure encapsulated resonant structures with integerated electrodes for electrostatii excitation and capacitive detection. Sens Actuators A66:160–166CrossRefGoogle Scholar
  2. Gooch R, Schimert T, McCardel W, Ritchey B, Gilmour D, Koziarz W (1999) Wafer-level vacuum packaging for MEMS. J Vac Sci Technol A 17(4):2295–2299CrossRefGoogle Scholar
  3. Oberhammer J, Niklaus F, Stemme G (2003) Selective wafer-level adhesive bonding with benzocyclobutene for fabrication of cavities. Sens Actuators A105:297–304CrossRefGoogle Scholar
  4. Plössl A, Kräuter G (1998) Wafer direct bonding: tailoring adhesion between brittle materials. Mater Sci Eng R25:1–88Google Scholar
  5. Wei J, Xie H, Nai ML, Wong CK, Lee LC (2003) Low temperature wafer anodic bonding. J Micromech Microeng 13:217–222CrossRefGoogle Scholar
  6. Wolfenbuttel RF (1997) Low temperature intermediate Au–Si wafer bonding; eutectic or silicide bond, Sens Actuators A62:680–686CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • S. Lani
    • 1
    Email author
  • A. Bosseboeuf
    • 1
  • B. Belier
    • 1
  • C. Clerc
    • 2
  • C. Gousset
    • 1
  • J. Aubert
    • 1
  1. 1.Institut d’Electronique FondamentaleUMR CNRS 8622, Université Paris SudOrsay CedexFrance
  2. 2.Centre de Spectrométrie Nucléaire et de Spectrométrie de MasseIN2P3-CNRS, Université Paris SudOrsay CedexFrance

Personalised recommendations