Microsystem Technologies

, 12:441 | Cite as

Anodic bonding of glass to aluminium

  • K. Schjølberg-Henriksen
  • E. Poppe
  • S. Moe
  • P. Storås
  • M.M.V. Taklo
  • D.T. Wang
  • H. Jakobsen
Technical paper

Abstract

Anodic bonding of glass to aluminium may provide a higher degree of freedom in device design. In this paper, a systematic variation of the bonding parameters for the aluminium–glass bond is presented. Hermetic seals with strengths of 18.0 MPa can be achieved using a 50–100-nm-thick bonding aluminium layer, and bonding at 300–400°C applying a voltage of 1,000–1,500 V for 20 min. With these parameters, bond yields above 95.1% were obtained on 17 wafers. The bonds survived extensive thermal ageing without significant degradation. The possibility of bonding glass to an aluminium layer with buried, electrically isolated conductors underneath is also demonstrated.

References

  1. Acero MC, Plaza JA, Esteve J, Carmona M, Marco S, Samitier J (1997) Design of a modular micropump based on anodic bonding. J Micromech Microeng 7:179–182CrossRefGoogle Scholar
  2. Altemose VO (1961) Helium diffusion through glass. J Appl Phys 32:1309–1316CrossRefGoogle Scholar
  3. Arata Y, Ohmori A, Sang S, Okamoto I (1984) Pressure and field-assisted bonding of glass to aluminium. Trans JWRI 13:35–40Google Scholar
  4. Hanneborg A, Øhlckers P (1990) A capacitive silicon pressure sensor with low TC0 and high long-term stability. Sens Act A21–23:151–154CrossRefGoogle Scholar
  5. Lapadatu D, Habibi S, Reppen B, Salomonsen G, Kvisterøy T (2001) Dual-axes capacitive inclinometer/low-g accelerometer for automotive applications. Tech. Digest 14th IEEE Intl Conf MEMS, Interlaken, Switzerland, 34–37Google Scholar
  6. Lee TMH, Lee DHY, Liaw CYN, Lao AIK, Hsing IM (2000) Detailed characterization of anodic bonding process between glass and thin-film coated silicon substrates. Sens Act A 86:103–107CrossRefGoogle Scholar
  7. Maszara WP, Goetz G, Caviglia A, McKitterick JB (1988) Bonding of silicon wafers for silicon-on-insulator. J Appl Phys 64:4943–4950CrossRefGoogle Scholar
  8. Nese M, Hanneborg A (1993) Anodic bonding of silicon to silicon wafers coated with aluminium, silicon oxide, polysilicon or silicon nitride. Sens Act A 37(38):61–67CrossRefGoogle Scholar
  9. Nitzsche P, Lange K, Schmidt B, Grigull S, Kreissig U, Thomas B, Herzog K (1998) Ion drift processes in Pyrex–Typr alkali–borosilicate glass during anodic bonding. J Electrochem Soc 145:1755–1762CrossRefGoogle Scholar
  10. Obermeier E (1995) Anodic wafer bonding. In: Hunt CE, Baumgart H, Iyer SS, Abe T, Gösele U (eds) Semiconductor wafer bonding: science, technology, and applications III. The Electrochemical Society, Pennington, NJ, pp 212–220Google Scholar
  11. Plaza JA, Esteve J, Lora-Tamayo E (1998) Effect of silicon oxide, silicon nitrode and polysilicon layers on the electrostatic pressure during anodic bonding. Sens Act A 67:181–184CrossRefGoogle Scholar
  12. Plummer JD, Deal MD, Griffin PB (2000) Silicon VLSI Technology, fundamentals, practice and modelling. Prentice Hall, Upper Saddle River, New JerseyGoogle Scholar
  13. Rogers T, Kowal J (1995) Selection of glass, anodic bonding conditions and material compatibility for silicon–glass capacitive sensors. Sens Act A 46–47:113–120CrossRefGoogle Scholar
  14. Taklo MMV, Storås P, Schjølberg-Henriksen K, Kasting HK, Jakobsen H (2004) Strong, high-yield and low-temperature thermocompression silicon wafer-level bonding with gold. J Micromech Microeng 14:884–890CrossRefGoogle Scholar
  15. van Helvoort ATJ, Knowles KM (2003) Nanostructures at electrostatic bond interfaces. J Am Ceram Soc 86:1773–1776CrossRefGoogle Scholar
  16. van Helvoort ATJ, Knowles KM, Fernie JA (2003) Interfacial microstructures of silicon–Pyrex electrostatic bonds. J Cer Proc Res 4:1–8Google Scholar
  17. Veenstra TT, Berenschot JW, Gardeniers JGE, Sanders RGP, Elwenspoek MC, van den Berg A (2001) Use of selective anodic bonding to create micropump chambers with virtually no dead volume. J Electrochem Soc 148:G68–G72CrossRefGoogle Scholar
  18. Visser MM, Wang DT, Hanneborg AB (2002a) Fast silicon to silicon wafer bonding with an intermediate glass film. In: Baumgart H, Hunt CE, Bengtsson S, Abe T (eds) Semiconductor wafer bonding: science, technology, and applications VI. The Electrochemical Society, Pennington, NJ, pp 74–83Google Scholar
  19. Visser MM, Weichel S, deReus R, Hanneborg A (2002b) Strength and leak testing of plasma activated bonded interfaces. Sens Act A97–98:434–440CrossRefGoogle Scholar
  20. von Arx J, Ziaie B, Dokmeci M, Najafi K (1995) Hermeticity testing of glass–silicon packages with on-chip feedthroughs. Tech Digest 8th Transducers, Stockholm, Sweden, 244–247Google Scholar
  21. Wallis G, Pomerantz DI (1969) Field-assisted glass–metal sealing. J Appl Phys 40:3946–3949CrossRefGoogle Scholar
  22. Weibull W (1939) Statistical theory of the strength of materials. Ingenjörsvetenskapsakademins Handlingar 151:1–45Google Scholar
  23. Weichel S, deReus R, Bouaidat S, Rasmussen PA, Hansen O, Birkelund K, Dirac H (2000) Low-temperature anodic bonding to silicon nitride. Sens Act A 82:249–253CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • K. Schjølberg-Henriksen
    • 1
  • E. Poppe
    • 1
  • S. Moe
    • 1
  • P. Storås
    • 1
  • M.M.V. Taklo
    • 1
  • D.T. Wang
    • 1
  • H. Jakobsen
    • 2
    • 3
  1. 1.Department of MicrosystemsSINTEF ICTOsloNorway
  2. 2.SensoNor ASHortenNorway
  3. 3.Vestfold University CollegeTønsbergNorway

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