Microsystem Technologies

, Volume 9, Issue 6–7, pp 431–435 | Cite as

Design and development of a piezoresistive pressure sensor on micromachined silicon for high-temperature applications and of a signal-conditioning electronic circuit

  • D. Crescini
  • V. Ferrari
  • Z. K. Vajna
  • D. Marioli
  • A. Taroni
  • A. Borgese
  • M. Marinelli
  • E. Milani
  • A. Paoletti
  • A. Tucciarone
  • G. Verona-Rinati
Article

Abstract

The deposition of diamond films on silicon substrate by MWPECVD is described and microstructural characteristics of the obtained films are reported. The resistive and piezoresistive properties of the diamond-on-silicon films have been measured beyond 200 °C by means of a purposely developed apparatus, and experimental results are reported. The piezoresistive properties at high temperature are exploited in the development of a micromachined pressure sensor capable of operating at up to 350–380 °C. A dedicated signal-conditioning electronic circuit is being designed and its functioning principle is here described.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2003

Authors and Affiliations

  • D. Crescini
    • 1
  • V. Ferrari
    • 1
  • Z. K. Vajna
    • 1
  • D. Marioli
    • 1
  • A. Taroni
    • 1
  • A. Borgese
    • 2
  • M. Marinelli
    • 3
  • E. Milani
    • 3
  • A. Paoletti
    • 3
  • A. Tucciarone
    • 3
  • G. Verona-Rinati
    • 3
  1. 1.Dipartimento di Elettronica per l'Automazione and INFMFacoltà di Ingegneria, Università di BresciaBresciaItaly
  2. 2.Gefran SensoriProvaglio d'Iseo (BS)
  3. 3.Università di Roma“Tor Vergata”

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