Applied Physics B

, Volume 64, Issue 4, pp 487–491 | Cite as

High-sensitivity detection of NO2 using a 740 nm semiconductor diode laser

  • L. Gianfrani
  • G. Gagliardi
  • G. Pesce
  • A. Sasso
Regul. Papers

Abstract.

 An AlGaAs diode laser was used to detect NO2 absorption lines belonging to the (0 0 0)–(2 13 1) vibrational band, within the X˜2A1 electronic ground state, at 739 nm. A simple absorption spectrometer based on wavelength-modulation spectroscopy with second-harmonic detection was developed. The minimum detectable pressure of pure NO2 was 0.1 μbar with 2 m absorption path-length, corresponding to an absorbance of 10-6. High-sensitivity detection of NO2 was also performed in the presence of N2 and air at different total pressures: The effects on the detection limit of our apparatus were accurately investigated. The minimum NO2 concentration at 500 mbar of air was measured to be 2 ppm.

PACS: 07.65; 33; 42.68 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1997

Authors and Affiliations

  • L. Gianfrani
    • 1
  • G. Gagliardi
    • 1
  • G. Pesce
    • 1
  • A. Sasso
    • 1
  1. 1.Dipartimento di Scienze Fisiche dell’Università di Napoli “Federico II”, INFM, Mostra d’Oltremare Pad. 20, I-80125 Napoli, ItalyIT

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