Applied Physics B

, Volume 72, Issue 2, pp 175–178 | Cite as

Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass

  • J.F. Philipps
  • T. Töpfer
  • H. Ebendorff-Heidepriem
  • D. Ehrt
  • R. Sauerbrey
  • N.F. Borrelli

Abstract.

Q-switched and cw operation of different diode-pumped erbium-ytterbium doped glasses at 1.5 μm has been studied in a compact microlaser setup. For Q-switching we used a novel PbS semiconductor quantum-dot doped glass which offers low saturation intensity compared with typical absorbers used and a fast time response. The cw laser delivered output powers of 35 mW with slope efficiencies of 16%. In Q-switched operation pulse energies of 1 μJ at repetition rates of 1–2 kHz and pulse durations of about 30–50 ns, depending on absorber thickness were obtained.

PACS: 42.55.Xi; 42.60.Gd; 42.70.Hj 

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Copyright information

© Springer-Verlag 2000

Authors and Affiliations

  • J.F. Philipps
    • 1
  • T. Töpfer
    • 1
  • H. Ebendorff-Heidepriem
    • 2
  • D. Ehrt
    • 2
  • R. Sauerbrey
    • 1
  • N.F. Borrelli
    • 3
  1. 1.Institut für Optik und Quantenelektronik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, GermanyDE
  2. 2.Otto-Schott-Institut für Glaschemie, Friedrich-Schiller-Universität Jena, Fraunhoferstrasse 6, D-07743 Jena, GermanyDE
  3. 3.Technology Group, Corning Inc., Research and Development Center, Sullivan Park, Corning New York 14831, USAUS

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