Applied Physics B

, 125:2 | Cite as

Design and investigation of a balanced silicon-based plasmonic internal-photoemission detector

  • Elahe Rastegar Pashaki
  • Hassan KaatuzianEmail author
  • Abdolber Mallah Livani
  • Hamed Ghodsi


Silicon-based plasmon detector is a key component in designing CMOS-compatible integrated plasmonic circuits. Internal-photoemission plasmonic detectors in metal–semiconductor–metal (MSM) structure are promising devices for this purpose, because of their ability to detect infrared wavelengths. In this paper, a balanced MSM-integrated plasmon detector device is proposed to isolate the output from dark current. Performance characteristics of the new device are numerically simulated. In a specific bias point (V = 3 V), the output current is 3.18 × 10−5 A, responsivity is 0.1288 A/W, SNR is 21.7 dB and area is about 2 µm2. Simulation results for this balanced plasmon detector, in comparison with experimental results of previous single-MSM device, demonstrate considerable dark current reduction.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Elahe Rastegar Pashaki
    • 1
  • Hassan Kaatuzian
    • 1
    Email author
  • Abdolber Mallah Livani
    • 2
  • Hamed Ghodsi
    • 1
  1. 1.Photonics Research Laboratory, Electrical Engineering DepartmentAmirkabir University of TechnologyTehranIran
  2. 2.Electrical Engineering DepartmentMazandaran University of Science and TechnologyBehshahrIran

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