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Applied Physics B

, 124:230 | Cite as

Optical characterization of SiC films grown on Si(111)

  • Raghavendra Rao Juri
  • John Lundsgaard Hansen
  • Peter Kjær Kristensen
  • Brian Julsgaard
  • Kjeld Pedersen
Article
  • 68 Downloads

Abstract

Thin SiC films, grown on Si by substitution of C into Si on Si substrates with and without a SiGe buffer layer, have been investigated with optical techniques. The formation of SiC domains leads to strong green and blue photoluminescence from stacking faults and surface oxides. Introduction of a 10-nm-thick SiGe buffer layer leads to improved crystallinity as evidenced by X-ray diffraction and optical second-harmonic generation (SHG). Nonlinear optical azimuthal rotational spectra demonstrate the presence of cubic SiC in the film. Furthermore, angle-of-incidence scans are consistent with simulations based on a film with cubic symmetry which demonstrates that the cubic phase dominates the SiC film. Growth on vicinal Si(111) leads to a SiC film with the same c1v symmetry as the substrate, demonstrating that the lattice planes of the SiC film follow those of the Si substrate. Spatially resolved SHG scans show structures that are related to the underlying structure of the Si interface resulting from the growth process.

Notes

Acknowledgements

This work was supported by Innovation Fund Denmark (Grant no. 1305-00005B).

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Interdisciplinary Nanoscience Center (iNANO)Aarhus UniversityAarhus CDenmark
  2. 2.Department of Physics and AstronomyAarhus UniversityAarhus CDenmark
  3. 3.Department of Materials and ProductionAalborg UniversityAalborg ØstDenmark

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