Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm
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In this work we study the resonant and coherent properties of single InP-based InAs quantum dots, which show an optical emission in the telecom C-band and L-band. High-resolution resonant photocurrent spectroscopy on p–i–n devices reveals narrow linewidths and fully resolved fine structure splittings. We observe Lorentzian line shapes, which allow for the extraction of dephasing times as a function of the applied bias voltage. Coherent ps laser excitation results in pronounced Rabi rotations with increasing pulse area. For π-pulse excitation, we obtain more than 93 % of the theoretically expected photocurrent amplitude. Our results also demonstrate that such state-of-the-art InP-based quantum dots for the telecom band exhibit promising key parameters comparable to well-established InAs/GaAs counterparts.
KeywordsBias Voltage Optical Parametric Oscillator Molecular Beam Epitaxy Growth Internal Electric Field Dephasing Time
We would like to acknowledge financial support from the German Federal Ministry of Education and Research (BMBF) via the Q.com projects 16KIS0112 and 16KIS0114.
- 11.T. Miyazawa, T. Nakaoka, K. Watanabe, N. Kumagai, N. Yokoyama, Y. Arakawa, Jpn. J. Appl. Phys 49, 06GJ09 (2010)Google Scholar